ON Semiconductor MUN2215T1G
- Part Number:
- MUN2215T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585599-MUN2215T1G
- Description:
- TRANS PREBIAS NPN 338MW SC59
- Datasheet:
- MUN2215T1G
ON Semiconductor MUN2215T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN2215T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation338mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation338mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min160
- Resistor - Base (R1)10 k Ω
- Continuous Collector Current100mA
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MUN2215T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN2215T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN2215T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN2215T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN2215T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN2215T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R - Tape and Reel
NPN Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R - Tape and Reel
NPN Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
The three parts on the right have similar specifications to MUN2215T1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentRoHS StatusLead FreeMountReach Compliance CodeJESD-30 CodeResistor - Emitter Base (R2)Radiation HardeningBase Part NumberMax Output CurrentOperating Supply VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageHeightLengthWidthREACH SVHCView Compare
-
MUN2215T1GACTIVE (Last Updated: 4 days ago)2 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)150°C-55°CBUILT-IN BIAS RESISTORBIP General Purpose Small Signal50V338mWDUALGULL WING260100mA403Not Qualified1NPNSingle338mWSWITCHINGHalogen FreeNPN - Pre-Biased50V100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V16010 k Ω100mAROHS3 CompliantLead Free---------------
-
--Surface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)2007e0-Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V338mWDUALGULL WING240100mA303Not Qualified1NPNSingle230mWSWITCHING-NPN - Pre-Biased250mV100mA8 @ 5mA 10V500nA250mV @ 5mA, 10mA50V82.2 k Ω100mANon-RoHS CompliantContains LeadSurface Mountnot_compliantR-PDSO-G32.2 k Ω----------
-
ACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountSC-74, SOT-457YES3Tape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signal-230mWDUALGULL WING---3-1PNPSingle-SWITCHINGHalogen FreePNP - Pre-Biased250mV100mA160 @ 5mA 10V500nA250mV @ 300μA, 10mA50V160100 k Ω-ROHS3 CompliantLead Free----No---------
-
ACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2009e3yesActive1 (Unlimited)3EAR99Tin (Sn)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 10BIP General Purpose Small Signal50V230mWDUALGULL WING260100mA403-1NPNSingle338mWSWITCHINGHalogen FreeNPN - Pre-Biased50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V804.7 k Ω100mAROHS3 CompliantLead Free---47 k ΩNoMUN2233100mA50V250mV50V1.09mm2.9mm1.5mmNo SVHC
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
14 March 2024
What is the NE555 and How Does it Work?
Ⅰ. The birth background of NE555Ⅱ. Introduction to NE555Ⅲ. Design of NE555 timerⅣ. Internal composition of NE555Ⅴ. Operating modes of the NE555Ⅵ. Working principle of NE555Ⅶ. Application of... -
15 March 2024
ULN2003 Alternatives, Characteristics, Working Principle and Application
Ⅰ. ULN2003 overviewⅡ. What are the characteristics of ULN2003?Ⅲ. Pin diagram and functions of ULN2003Ⅳ. Working principle and function of ULN2003Ⅴ. ULN2003 drive circuit diagramⅥ. Where is ULN2003... -
15 March 2024
Detailed Explanation of 24C02 EEPROM Memory Chip
Ⅰ. Overview of 24C02Ⅱ. Functions of 24C02Ⅲ. Basic operations of 24C02Ⅳ. Application of 24C02Ⅴ. 24C02 pinoutⅥ. How to protect the data of 24C02?Ⅶ. How to use 24C02?EEPROM refers... -
18 March 2024
LM324N Internal Structure, Working Principle and LM324 vs LM324N
Ⅰ. Overview of LM324NⅡ. Internal structure and working principle of LM324NⅢ. Typical performance characteristics of LM324NⅣ. How to configure the power supply for LM324N?Ⅴ. Pin description of LM324NⅥ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.