ON Semiconductor MUN2214T1G
- Part Number:
- MUN2214T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2470340-MUN2214T1G
- Description:
- TRANS PREBIAS NPN 230MW SC59
- Datasheet:
- MUN2214T1G
ON Semiconductor MUN2214T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN2214T1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 4.7
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation230mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMUN2214
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation338mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)10 k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47 k Ω
- Height1.09mm
- Length2.9mm
- Width1.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MUN2214T1G Description
The ON Semiconductor MUN2214T1G is a Digital Transistor (BRT) (R1 = 10 kΩ, R2 = 47 kΩ) with a single transistor and a monolithic bias network made up of two resistors: a series base resistor and a base-emitter resistor.
MUN2214T1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
MUN2214T1G Application
Automotive
Power Management
Industrial
The ON Semiconductor MUN2214T1G is a Digital Transistor (BRT) (R1 = 10 kΩ, R2 = 47 kΩ) with a single transistor and a monolithic bias network made up of two resistors: a series base resistor and a base-emitter resistor.
MUN2214T1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
MUN2214T1G Application
Automotive
Power Management
Industrial
MUN2214T1G More Descriptions
Trans Digital BJT NPN 50V 100mA 338mW Automotive 3-Pin SC-59 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
MUN Series 50 V 100 mA 10 kOhm NPN Silicon Bias Resistor Transistor - SC-59
NPN Bipolar Digital Transistor (BRT)
NPN - Pre-Biased 230mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, RF, NPN, 50V, SC-59-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current
Brt Transistor, 50V, 47K/10Kohm, Sc-59, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; Msl:- Rohs Compliant: Yes |Onsemi MUN2214T1G.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
MUN Series 50 V 100 mA 10 kOhm NPN Silicon Bias Resistor Transistor - SC-59
NPN Bipolar Digital Transistor (BRT)
NPN - Pre-Biased 230mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, RF, NPN, 50V, SC-59-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current
Brt Transistor, 50V, 47K/10Kohm, Sc-59, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; Msl:- Rohs Compliant: Yes |Onsemi MUN2214T1G.
The three parts on the right have similar specifications to MUN2214T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountTerminal FinishReach Compliance CodeJESD-30 CodeQualification StatusView Compare
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MUN2214T1GACTIVE (Last Updated: 2 days ago)8 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 4.7BIP General Purpose Small Signal50V230mWDUALGULL WING260100mA40MUN22143100mA50V1NPNSingle338mWSWITCHINGHalogen FreeNPN - Pre-Biased50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V250mV50V8010 k Ω100mA47 k Ω1.09mm2.9mm1.5mmNo SVHCNoROHS3 CompliantLead Free------
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---Surface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)2009e0-Obsolete1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 2.14BIP General Purpose Small Signal-50V230mWDUALGULL WING240-100mA30-3--1PNPSingle230mWSWITCHING-PNP - Pre-Biased250mV100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V--8022 k Ω100mA47 k Ω-----Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn/Pb)not_compliantR-PDSO-G3Not Qualified
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ACTIVE (Last Updated: 2 days ago)8 Weeks-Surface MountSC-74, SOT-457YES3Tape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT IN BIAS RESISTORBIP General Purpose Small Signal-230mWDUALGULL WING----3--1PNPSingle-SWITCHINGHalogen FreePNP - Pre-Biased250mV100mA160 @ 5mA 10V500nA250mV @ 300μA, 10mA50V--160100 k Ω------NoROHS3 CompliantLead Free-Tin (Sn)---
-
ACTIVE (Last Updated: 2 days ago)8 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2009e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 10BIP General Purpose Small Signal50V230mWDUALGULL WING260100mA40MUN22333100mA50V1NPNSingle338mWSWITCHINGHalogen FreeNPN - Pre-Biased50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V250mV50V804.7 k Ω100mA47 k Ω1.09mm2.9mm1.5mmNo SVHCNoROHS3 CompliantLead Free-Tin (Sn)---
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