Micron Technology Inc. MT9KDF51272PZ-1G4E1
- Part Number:
- MT9KDF51272PZ-1G4E1
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 4557636-MT9KDF51272PZ-1G4E1
- Description:
- MODULE DDR3 SDRAM 4GB RDIMM
- Datasheet:
- MT9KDF51272PZ-1G4E1
Micron Technology Inc. MT9KDF51272PZ-1G4E1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT9KDF51272PZ-1G4E1.
- Surface MountNO
- Number of Pins240
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations240
- ECCN CodeEAR99
- Max Operating Temperature70°C
- Min Operating Temperature0°C
- Additional FeatureAUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX
- HTS Code8542.32.00.36
- TechnologyCMOS
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage1.35V
- Terminal Pitch1mm
- Operating Supply Voltage1.35V
- Supply Voltage-Max (Vsup)1.45V
- Temperature GradeCOMMERCIAL
- Supply Voltage-Min (Vsup)1.283V
- Memory Size4GB
- Number of Ports1
- Speed1333MT/s
- Memory TypeDDR3 SDRAM
- Data Bus Width72b
- Organization512MX72
- Memory Width72
- Memory Density38654705664 bit
- Max Frequency1.333GHz
- Access ModeSINGLE BANK PAGE BURST
- Height Seated (Max)18.9mm
- Length133.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
Images are for reference only.See Product Specifications for product details.If you are interested to buy Micron Technology MT9KDF51272PZ-1G4E1.
MT9KDF51272PZ-1G4E1 More Descriptions
DRAM Module DDR3L SDRAM 4Gbyte 240RDIMM
MODULE DDR3 SDRAM 4GB RDIMM
MODULE DDR3 SDRAM 4GB RDIMM
The three parts on the right have similar specifications to MT9KDF51272PZ-1G4E1.
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ImagePart NumberManufacturerSurface MountNumber of PinsPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeTechnologyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchOperating Supply VoltageSupply Voltage-Max (Vsup)Temperature GradeSupply Voltage-Min (Vsup)Memory SizeNumber of PortsSpeedMemory TypeData Bus WidthOrganizationMemory WidthMemory DensityMax FrequencyAccess ModeHeight Seated (Max)LengthRadiation HardeningRoHS StatusPackage / CasePublishedTerminal FormReach Compliance CodeOperating ModeJESD-609 CodePbfree CodeTerminal FinishSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusOperating Temperature (Max)Power SuppliesClock FrequencyOutput CharacteristicsI/O TypeRefresh CyclesFactory Lead TimeWidthView Compare
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MT9KDF51272PZ-1G4E1NO240Obsolete3 (168 Hours)240EAR9970°C0°CAUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX8542.32.00.36CMOSDUAL11.35V1mm1.35V1.45VCOMMERCIAL1.283V4GB11333MT/sDDR3 SDRAM72b512MX727238654705664 bit1.333GHzSINGLE BANK PAGE BURST18.9mm133.35mmNoROHS3 Compliant---------------------
-
NO204Obsolete3 (168 Hours)204-70°C0°CAUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY-CMOSZIG-ZAG11.35V0.6mm1.35V1.45VCOMMERCIAL1.283V4GB11600MT/sDDR3L SDRAM72b512MX727238654705664 bit800MHzSINGLE BANK PAGE BURST30.15mm67.6mm-ROHS3 Compliant204-SODIMM2015NO LEADunknownSYNCHRONOUS---------------
-
NO240Obsolete1 (Unlimited)240-----CMOSDUAL--1mm--COMMERCIAL-2GB-1333MT/sDDR3L SDRAM-256MX727219327352832 bit-----ROHS3 Compliant240-RDIMM2013NO LEAD--e3yesMATTE TINDRAMs225NOT SPECIFIEDNot Qualified70°C1.353.3V667MHz3-STATECOMMON8192--
-
NO204Obsolete3 (168 Hours)204EAR99--AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY-CMOSZIG-ZAG11.35V--1.45VCOMMERCIAL1.283V4GB11600MT/sDDR3L SDRAM-512MX727238654705664 bit-SINGLE BANK PAGE BURST30.15mm67.6mm-ROHS3 Compliant204-SODIMM-NO LEAD-SYNCHRONOUS-------70°C-----5 Weeks3.8mm
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