Micron Technology Inc. MT8VDDT6464HY-335J1
- Part Number:
- MT8VDDT6464HY-335J1
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3863526-MT8VDDT6464HY-335J1
- Description:
- MODULE DDR SDRAM 512MB 200SODIMM
- ECAD Model:
-
- Datasheet:
- MT8VDDT6464HY-335J1
Micron Technology Inc. MT8VDDT6464HY-335J1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT8VDDT6464HY-335J1.
- MountSocket
- Package / Case200-SODIMM
- Number of Pins200
- Published2003
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations200
- Max Operating Temperature70°C
- Min Operating Temperature0°C
- SubcategoryDRAMs
- TechnologyCMOS
- Terminal PositionDUAL
- Supply Voltage2.5V
- Terminal Pitch0.6mm
- Operating Supply Voltage2.5V
- Number of Elements8
- Temperature GradeCOMMERCIAL
- Max Supply Voltage2.7V
- Min Supply Voltage2.3V
- Memory Size512MB
- Speed333MT/s
- Memory TypeDDR SDRAM
- Clock Frequency167MHz
- Supply Current-Max3.24mA
- Data Bus Width64b
- Organization64MX64
- Output Characteristics3-STATE
- Memory Width64
- Standby Current-Max0.04A
- Memory Density4294967296 bit
- Max Frequency333MHz
- Access Time (Max)0.7 ns
- I/O TypeCOMMON
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
Images are for reference only.See Product Specifications for product details.If you are interested to buy Micron Technology MT8VDDT6464HY-335J1.
MT8VDDT6464HY-335J1 More Descriptions
Dram Module Ddr Sdram 512MBYTE 200SODIMM
MODULE DDR 512MB SODIMM TSOP
MODULE DDR 512MB SODIMM TSOP
The three parts on the right have similar specifications to MT8VDDT6464HY-335J1.
-
ImagePart NumberManufacturerMountPackage / CaseNumber of PinsPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Operating TemperatureMin Operating TemperatureSubcategoryTechnologyTerminal PositionSupply VoltageTerminal PitchOperating Supply VoltageNumber of ElementsTemperature GradeMax Supply VoltageMin Supply VoltageMemory SizeSpeedMemory TypeClock FrequencySupply Current-MaxData Bus WidthOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityMax FrequencyAccess Time (Max)I/O TypeRadiation HardeningRoHS StatusPackagingHeightLead FreeView Compare
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MT8VDDT6464HY-335J1Socket200-SODIMM2002003Obsolete3 (168 Hours)20070°C0°CDRAMsCMOSDUAL2.5V0.6mm2.5V8COMMERCIAL2.7V2.3V512MB333MT/sDDR SDRAM167MHz3.24mA64b64MX643-STATE640.04A4294967296 bit333MHz0.7 nsCOMMONNoROHS3 Compliant---- -
-100-UDIMM1002015Obsolete3 (168 Hours)-70°C0°C-----2.5V----512MB400MT/sDDR SDRAM--32b--------NoROHS3 Compliant---
-
Socket184-UDIMM1842002Obsolete1 (Unlimited)18470°C0°CDRAMsCMOSDUAL2.6V1.27mm2.6V8COMMERCIAL2.7V2.5V512MB400MT/sDDR SDRAM200MHz3.6mA64b64MX643-STATE640.04A4294967296 bit400MHz0.7 nsCOMMONNoNon-RoHS CompliantBulk31.2mmContains Lead
-
-184-UDIMM1842003Discontinued1 (Unlimited)-70°C0°C-----2.6V----512MB400MT/sDDR SDRAM--64b-----400MHz--NoROHS3 CompliantBulk31.8mmLead Free
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