Micron Technology Inc. MT8KTF51264HZ-1G9E2

Name: MT8KTF51264HZ-1G9E2
Brand: Micron Technology Inc.
SKU: 3863556-MT8KTF51264HZ-1G9E2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT8KTF51264HZ-1G9E2

Manufacturer:: Micron Technology Inc.

Ventron No:: 3863556-MT8KTF51264HZ-1G9E2

Description:: MODULE DDR3L SDRAM 4GB 204SODIMM

ECAD Model:

Datasheet:: MT8KTFzzz64HZ

Specifications

Micron Technology Inc. MT8KTF51264HZ-1G9E2 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT8KTF51264HZ-1G9E2.

Package / Case
204-SODIMM
Number of Pins
204
Published
2015
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Memory Size
4GB
Speed
1866MT/s
Memory Type
DDR3L SDRAM
RoHS Status
ROHS3 Compliant

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy Micron Technology MT8KTF51264HZ-1G9E2.

MT8KTF51264HZ-1G9E2 More Descriptions

Module DDR3L Sdram 4GB 204SODIMM

Product Comparison

The three parts on the right have similar specifications to MT8KTF51264HZ-1G9E2.

Image

Part Number

Manufacturer

Package / Case

Number of Pins

Published

Part Status

Moisture Sensitivity Level (MSL)

Memory Size

Speed

Memory Type

RoHS Status

Mount

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

Technology

Terminal Position

Number of Functions

Supply Voltage

Terminal Pitch

Pin Count

Operating Supply Voltage

Number of Elements

Temperature Grade

Max Supply Voltage

Number of Ports

Data Bus Width

Organization

Memory Width

Max Frequency

Access Mode

Height Seated (Max)

Length

Radiation Hardening

Min Supply Voltage

Factory Lead Time

Subcategory

Terminal Form

Qualification Status

Operating Mode

Output Characteristics

Standby Current-Max

I/O Type

View Compare
MT8KTF51264HZ-1G9E2

Micron Technology Inc.

204-SODIMM

204

2015

Obsolete

3 (168 Hours)

4GB

1866MT/s

DDR3L SDRAM

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT8KTF25664AZ-1G4M1

Micron Technology Inc.

240-UDIMM

240

2013

Obsolete

1 (Unlimited)

2GB

1333MT/s

DDR3L SDRAM

ROHS3 Compliant

Socket

e4

240

EAR99

GOLD

70°C

0°C

AUTO/SELF REFRESH

CMOS

DUAL

1

1.35V

1mm

240

1.35V

8

COMMERCIAL

1.45V

1

64b

256MX64

64

1.333GHz

SINGLE BANK PAGE BURST

30.5mm

133.35mm

No

-

-

-

-

-

-

-

-

-

MT8KTF51264HZ-1G9E2 vs MT8KTF25664AZ-1G4M1
MT8KTF51264HZ-1G9E1

Micron Technology Inc.

204-SODIMM

204

2015

Obsolete

3 (168 Hours)

4GB

1866MT/s

DDR3L SDRAM

ROHS3 Compliant

Socket

-

-

-

-

70°C

0°C

-

-

-

-

-

-

-

1.35V

8

-

1.45V

-

64b

-

-

1.866GHz

-

-

-

No

1.283V

-

-

-

-

-

-

-

-

MT8KTF51264HZ-1G9E2 vs MT8KTF51264HZ-1G9E1
MT8KTF25664HZ-1G6K1

Micron Technology Inc.

204-SODIMM

204

2014

Obsolete

1 (Unlimited)

2GB

1600MT/s

DDR3L SDRAM

ROHS3 Compliant

Socket

-

204

EAR99

-

70°C

0°C

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX

CMOS

ZIG-ZAG

1

1.35V

0.6mm

-

1.35V

8

COMMERCIAL

1.45V

1

64b

256MX64

64

1.6GHz

SINGLE BANK PAGE BURST

30.15mm

67.6mm

-

1.283V

12 Weeks

DRAMs

NO LEAD

Not Qualified

SYNCHRONOUS

3-STATE

0.096A

COMMON

MT8KTF51264HZ-1G9E2 vs MT8KTF25664HZ-1G6K1