Micron Technology Inc. MT8JTF51264HZ-1G6E1

Name: MT8JTF51264HZ-1G6E1
Brand: Micron Technology Inc.
SKU: 3863530-MT8JTF51264HZ-1G6E1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT8JTF51264HZ-1G6E1

Manufacturer:: Micron Technology Inc.

Ventron No:: 3863530-MT8JTF51264HZ-1G6E1

Description:: MODULE DDR3 SDRAM 4GB 204-SODIMM

ECAD Model:

Datasheet:: MT8JTF51264HZ-1G6E1

Specifications

Micron Technology Inc. MT8JTF51264HZ-1G6E1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT8JTF51264HZ-1G6E1.

Mount
Socket
Package / Case
204-SODIMM
Number of Pins
204
Published
2015
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
204
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Additional Feature
SELF REFRESH; WD-MAX
Technology
CMOS
Terminal Position
ZIG-ZAG
Terminal Form
NO LEAD
Number of Functions
1
Supply Voltage
1.5V
Terminal Pitch
0.6mm
Reach Compliance Code
unknown
Operating Supply Voltage
1.5V
Number of Elements
8
Temperature Grade
COMMERCIAL
Max Supply Voltage
1.575V
Min Supply Voltage
1.425V
Memory Size
4GB
Number of Ports
1
Speed
1600MT/s
Memory Type
DDR3 SDRAM
Operating Mode
SYNCHRONOUS
Organization
512MX64
Memory Width
64
Max Frequency
1.6GHz
Access Mode
SINGLE BANK PAGE BURST
Height Seated (Max)
30.15mm
Length
67.6mm
RoHS Status
ROHS3 Compliant

Description

part No. MT8JTF51264HZ-1G6E1 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

MT8JTF51264HZ-1G6E1 More Descriptions

DRAM Module DDR3 SDRAM 4Gbyte 204SODIMM
MODULE DDR3 SDRAM 4GB 204-SODIMM

Product Comparison

The three parts on the right have similar specifications to MT8JTF51264HZ-1G6E1.

Image

Part Number

Manufacturer

Mount

Package / Case

Number of Pins

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Additional Feature

Technology

Terminal Position

Terminal Form

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Operating Supply Voltage

Number of Elements

Temperature Grade

Max Supply Voltage

Min Supply Voltage

Memory Size

Number of Ports

Speed

Memory Type

Operating Mode

Organization

Memory Width

Max Frequency

Access Mode

Height Seated (Max)

Length

RoHS Status

Surface Mount

Subcategory

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Power Supplies

Clock Frequency

Supply Current-Max

Output Characteristics

Standby Current-Max

Memory Density

I/O Type

Refresh Cycles

Data Bus Width

Radiation Hardening

JESD-609 Code

Pbfree Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

View Compare
MT8JTF51264HZ-1G6E1

Micron Technology Inc.

Socket

204-SODIMM

204

2015

Obsolete

3 (168 Hours)

204

70°C

0°C

SELF REFRESH; WD-MAX

CMOS

ZIG-ZAG

NO LEAD

1

1.5V

0.6mm

unknown

1.5V

8

COMMERCIAL

1.575V

1.425V

4GB

1

1600MT/s

DDR3 SDRAM

SYNCHRONOUS

512MX64

64

1.6GHz

SINGLE BANK PAGE BURST

30.15mm

67.6mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT8JSF12864HY-1G4D1

Micron Technology Inc.

-

240-SODIMM

240

2012

Obsolete

3 (168 Hours)

204

-

-

-

CMOS

DUAL

NO LEAD

-

-

0.6mm

unknown

-

-

COMMERCIAL

-

-

1GB

-

1333MT/s

DDR3 SDRAM

-

128MX64

64

-

-

-

-

ROHS3 Compliant

NO

DRAMs

R-PDMA-N204

Not Qualified

70°C

1.53.3V

667MHz

3.92mA

3-STATE

0.08A

8589934592 bit

COMMON

8192

-

-

-

-

-

-

-

MT8JTF51264HZ-1G6E1 vs MT8JSF12864HY-1G4D1
MT8JTF25664HZ-1G6M1

Micron Technology Inc.

-

204-SODIMM

204

2013

Obsolete

3 (168 Hours)

-

70°C

0°C

-

-

-

-

-

-

-

-

1.5V

-

-

-

-

2GB

-

1600MT/s

DDR3 SDRAM

-

-

-

1.6GHz

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

64b

No

-

-

-

-

-

MT8JTF51264HZ-1G6E1 vs MT8JTF25664HZ-1G6M1
MT8JSF25664HZ-1G1D1

Micron Technology Inc.

Socket

204-SODIMM

204

2011

Obsolete

3 (168 Hours)

204

70°C

0°C

AUTO/SELF REFRESH; WD-MAX

CMOS

ZIG-ZAG

-

1

1.5V

0.6mm

-

1.5V

8

COMMERCIAL

1.575V

1.425V

2GB

1

1066MT/s

DDR3 SDRAM

-

256MX64

64

1.066GHz

SINGLE BANK PAGE BURST

30.15mm

67.6mm

ROHS3 Compliant

-

DRAMs

-

-

-

1.53.3V

533MHz

2.56mA

3-STATE

0.096A

-

COMMON

-

64b

No

e3

yes

MATTE TIN

260

30

MT8JTF51264HZ-1G6E1 vs MT8JSF25664HZ-1G1D1