Micron Technology Inc. MT48V4M32LFF5-8 IT:G
- Part Number:
- MT48V4M32LFF5-8 IT:G
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3245656-MT48V4M32LFF5-8 IT:G
- Description:
- IC SDRAM 128MBIT 125MHZ 90VFBGA
- Datasheet:
- MT48LCxMxxLF, MT48VxMxxLF
Micron Technology Inc. MT48V4M32LFF5-8 IT:G technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT48V4M32LFF5-8 IT:G.
- Mounting TypeSurface Mount
- Package / Case90-VFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2007
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations90
- ECCN CodeEAR99
- Terminal FinishTIN LEAD SILVER
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.24
- TechnologySDRAM - Mobile LPSDR
- Voltage - Supply2.3V~2.7V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)235
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch0.8mm
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT48V4M32
- Pin Count90
- JESD-30 CodeR-PBGA-B90
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)2.7V
- Power Supplies1.8/2.52.5V
- Supply Voltage-Min (Vsup)2.3V
- Memory Size128Mb 4M x 32
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency125MHz
- Supply Current-Max0.15mA
- Access Time7ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization8MX32
- Output Characteristics3-STATE
- Memory Width32
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.00045A
- Memory Density268435456 bit
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Height Seated (Max)1mm
- Length13mm
- Width8mm
- RoHS StatusNon-RoHS Compliant
MT48V4M32LFF5-8 IT:G Overview
The technology known as SDRAM - Mobile LPSDR is a type of memory that operates in a synchronous manner and has a parallel memory interface. It requires a supply voltage of 2.3V~2.7V, with a minimum supply voltage of 2.3V. The terminal pitch, or distance between the pins, is 0.8mm and it has one port for data transfer. However, this particular technology does not comply with reach compliance codes. In terms of physical dimensions, it has a maximum seated height of 1mm and a length of 13mm. This type of technology is commonly used in mobile devices and offers high-speed data transfer and efficient processing.
MT48V4M32LFF5-8 IT:G Features
Package / Case: 90-VFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT48V4M32LFF5-8 IT:G Applications
There are a lot of Micron Technology Inc.
MT48V4M32LFF5-8 IT:G Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The technology known as SDRAM - Mobile LPSDR is a type of memory that operates in a synchronous manner and has a parallel memory interface. It requires a supply voltage of 2.3V~2.7V, with a minimum supply voltage of 2.3V. The terminal pitch, or distance between the pins, is 0.8mm and it has one port for data transfer. However, this particular technology does not comply with reach compliance codes. In terms of physical dimensions, it has a maximum seated height of 1mm and a length of 13mm. This type of technology is commonly used in mobile devices and offers high-speed data transfer and efficient processing.
MT48V4M32LFF5-8 IT:G Features
Package / Case: 90-VFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT48V4M32LFF5-8 IT:G Applications
There are a lot of Micron Technology Inc.
MT48V4M32LFF5-8 IT:G Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT48V4M32LFF5-8 IT:G More Descriptions
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90
DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 2.5V 90-Pin VFBGA Tray
IC SDRAM 128MBIT 125MHZ 90VFBGA
DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 2.5V 90-Pin VFBGA Tray
IC SDRAM 128MBIT 125MHZ 90VFBGA
The three parts on the right have similar specifications to MT48V4M32LFF5-8 IT:G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusPbfree CodeFactory Lead TimeView Compare
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MT48V4M32LFF5-8 IT:GSurface Mount90-VFBGAYES-40°C~85°C TATray2007e0Obsolete2 (1 Year)90EAR99TIN LEAD SILVERAUTO/SELF REFRESH8542.32.00.24SDRAM - Mobile LPSDR2.3V~2.7VBOTTOM23512.5V0.8mmnot_compliant30MT48V4M3290R-PBGA-B90Not Qualified2.7V1.8/2.52.5V2.3V128Mb 4M x 321VolatileSYNCHRONOUS125MHz0.15mA7nsDRAMParallel8MX323-STATE3215ns0.00045A268435456 bitCOMMON40961248FP12481mm13mm8mmNon-RoHS Compliant---
-
Surface Mount54-TSOP (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)2006-Obsolete4 (72 Hours)-EAR99--8542.32.00.28SDRAM3V~3.6V-------MT48LC32M16A254-----512Mb 32M x 16-Volatile-133MHz-5.4nsDRAMParallel---15ns---------ROHS3 Compliantyes-
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Surface Mount54-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATray--Last Time Buy-54--AUTO/SELF REFRESH-SDRAM3V~3.6VDUAL-13.3V0.8mm----R-PDSO-G54-3.6V-3V256Mb 16M x 161VolatileSYNCHRONOUS133MHz-5.4nsDRAMParallel16MX16-1614ns-268435456 bit----1.2mm22.22mm10.16mmROHS3 Compliant-11 Weeks
-
Surface Mount54-TSOP (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)2012-Discontinued4 (72 Hours)-----SDRAM3V~3.6V--------------512Mb 32M x 16-Volatile-133MHz-5.4nsDRAMParallel---15ns---------Non-RoHS Compliant--
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