Micron Technology Inc. MT48LC16M16A2P-7E:G
- Part Number:
- MT48LC16M16A2P-7E:G
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3721035-MT48LC16M16A2P-7E:G
- Description:
- IC SDRAM 256MBIT 133MHZ 54TSOP
- Datasheet:
- MT48LCxxM4/8/16A2
Micron Technology Inc. MT48LC16M16A2P-7E:G technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT48LC16M16A2P-7E:G.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case54-TSOP (0.400, 10.16mm Width)
- Number of Pins54
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations54
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Base Part NumberMT48LC16M16A2
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)3V
- Memory Size256Mb 16M x 16
- Number of Ports1
- Nominal Supply Current100mA
- Memory TypeVolatile
- Clock Frequency133MHz
- Access Time5.4ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization16MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page14ns
- Address Bus Width15b
- Density256 Mb
- Standby Current-Max0.0025A
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Height Seated (Max)1.2mm
- Length22.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT48LC16M16A2P-7E:G Overview
This particular component is manufactured by Micron Technology Inc. and falls under the Memory category. It is specifically a Memory chip, designed for storing and retrieving data. The code assigned to it by the Joint Electron Device Engineering Council (JESD) is e3, indicating its compliance with industry standards. Its technology is based on Synchronous Dynamic Random Access Memory (SDRAM), which allows for faster data access and processing. The terminal pitch, or distance between the pins, is 0.8mm. This chip has a clock frequency of 133MHz, meaning it can perform 133 million cycles per second. The memory interface is parallel, meaning data is transferred in parallel (simultaneously) rather than serially (one bit at a time). The write cycle time for a single word or page is 14 nanoseconds, indicating its speed and efficiency. The maximum standby current is 0.0025A, ensuring low power consumption when the chip is not in use. It has a sequential burst length of 1248FP, meaning it can transfer data in sequential bursts of 1248 words. It also has an interleaved burst length of 1248, allowing for interleaved data transfer between multiple memory chips. This chip is not designed for radiation hardening, meaning it is not resistant to damage from radiation.
MT48LC16M16A2P-7E:G Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
54 Pins
Operating Supply Voltage:3.3V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT48LC16M16A2P-7E:G Applications
There are a lot of Micron Technology Inc. MT48LC16M16A2P-7E:G Memory applications.
cell phones
telecommunications
eSRAM
servers
Camcorders
hard disk drive (HDD)
multimedia computers
supercomputers
personal digital assistants
nonvolatile BIOS memory
This particular component is manufactured by Micron Technology Inc. and falls under the Memory category. It is specifically a Memory chip, designed for storing and retrieving data. The code assigned to it by the Joint Electron Device Engineering Council (JESD) is e3, indicating its compliance with industry standards. Its technology is based on Synchronous Dynamic Random Access Memory (SDRAM), which allows for faster data access and processing. The terminal pitch, or distance between the pins, is 0.8mm. This chip has a clock frequency of 133MHz, meaning it can perform 133 million cycles per second. The memory interface is parallel, meaning data is transferred in parallel (simultaneously) rather than serially (one bit at a time). The write cycle time for a single word or page is 14 nanoseconds, indicating its speed and efficiency. The maximum standby current is 0.0025A, ensuring low power consumption when the chip is not in use. It has a sequential burst length of 1248FP, meaning it can transfer data in sequential bursts of 1248 words. It also has an interleaved burst length of 1248, allowing for interleaved data transfer between multiple memory chips. This chip is not designed for radiation hardening, meaning it is not resistant to damage from radiation.
MT48LC16M16A2P-7E:G Features
Package / Case: 54-TSOP (0.400, 10.16mm Width)
54 Pins
Operating Supply Voltage:3.3V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT48LC16M16A2P-7E:G Applications
There are a lot of Micron Technology Inc. MT48LC16M16A2P-7E:G Memory applications.
cell phones
telecommunications
eSRAM
servers
Camcorders
hard disk drive (HDD)
multimedia computers
supercomputers
personal digital assistants
nonvolatile BIOS memory
MT48LC16M16A2P-7E:G More Descriptions
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II Tray
e3 Surface Mount MT48LC16M16A2 Tray ic memory 133MHz 5.4ns 22.22mm 100mA
Y66A SDRAM 16MX16 PLASTIC PBF TSOP 3.3V
IC SDRAM 256MBIT 133MHZ 54TSOP
Product Description Demo for Development.
e3 Surface Mount MT48LC16M16A2 Tray ic memory 133MHz 5.4ns 22.22mm 100mA
Y66A SDRAM 16MX16 PLASTIC PBF TSOP 3.3V
IC SDRAM 256MBIT 133MHZ 54TSOP
Product Description Demo for Development.
The three parts on the right have similar specifications to MT48LC16M16A2P-7E:G.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRadiation HardeningRoHS StatusLead FreeECCN CodeHTS CodePin CountSurface MountJESD-30 CodeOperating ModeMemory DensityWidthView Compare
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MT48LC16M16A2P-7E:G4 WeeksTinSurface MountSurface Mount54-TSOP (0.400, 10.16mm Width)540°C~70°C TATray2014e3yesObsolete3 (168 Hours)54AUTO/SELF REFRESHSDRAM3V~3.6VDUAL13.3V0.8mmMT48LC16M16A23.3V3.6V3V256Mb 16M x 161100mAVolatile133MHz5.4nsDRAMParallel16b16MX163-STATE1614ns15b256 Mb0.0025ACOMMON81921248FP12481.2mm22.22mmNoROHS3 CompliantLead Free---------
-
---Surface Mount54-TSOP (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)2006-yesObsolete4 (72 Hours)--SDRAM3V~3.6V----MT48LC32M16A2---512Mb 32M x 16--Volatile133MHz5.4nsDRAMParallel----15ns----------ROHS3 Compliant-EAR998542.32.00.2854-----
-
11 Weeks--Surface Mount54-TSOP (0.400, 10.16mm Width)--40°C~85°C TATray---Last Time Buy-54AUTO/SELF REFRESHSDRAM3V~3.6VDUAL13.3V0.8mm--3.6V3V256Mb 16M x 161-Volatile133MHz5.4nsDRAMParallel-16MX16-1614ns-------1.2mm22.22mm-ROHS3 Compliant----YESR-PDSO-G54SYNCHRONOUS268435456 bit10.16mm
-
---Surface Mount90-VFBGA--40°C~105°C TATape & Reel (TR)---Obsolete3 (168 Hours)--SDRAM - Mobile LPSDR1.7V~1.95V--------512Mb 16M x 32--Volatile166MHz5nsDRAMParallel----15ns----------ROHS3 Compliant---------
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