Micron Technology Inc. MT48H8M32LFF5-10
- Part Number:
- MT48H8M32LFF5-10
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3239961-MT48H8M32LFF5-10
- Description:
- IC SDRAM 256MBIT 100MHZ 90VFBGA
- Datasheet:
- MT48H8M32LF, MT48LC8M32LF, MT48V8M32LF
Micron Technology Inc. MT48H8M32LFF5-10 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT48H8M32LFF5-10.
- Mounting TypeSurface Mount
- Package / Case90-VFBGA
- Surface MountYES
- Number of Pins90
- Operating Temperature0°C~70°C TA
- PackagingBox
- Published2005
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations90
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.24
- TechnologySDRAM - Mobile LPSDR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)235
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT48H8M32
- Pin Count90
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size256Mb 8M x 32
- Number of Ports1
- Memory TypeVolatile
- Clock Frequency100MHz
- Supply Current-Max0.17mA
- Access Time7ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width32b
- Organization8MX32
- Memory Width32
- Write Cycle Time - Word, Page15ns
- Address Bus Width14b
- Density256 Mb
- Standby Current-Max0.00001A
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Height Seated (Max)1mm
- Length13mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MT48H8M32LFF5-10 Overview
The product has 90 pins and was published in 2005. It has a JESD-609 Code of e0 and 90 terminations. The HTS Code is 8542.32.00.24 and the technology used is SDRAM - Mobile LPSDR. The pin count is 90 and the data bus width is 32b. The sequential burst length is 1248FP and the interleaved burst length is 1248.
MT48H8M32LFF5-10 Features
Package / Case: 90-VFBGA
90 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT48H8M32LFF5-10 Applications
There are a lot of Micron Technology Inc.
MT48H8M32LFF5-10 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
The product has 90 pins and was published in 2005. It has a JESD-609 Code of e0 and 90 terminations. The HTS Code is 8542.32.00.24 and the technology used is SDRAM - Mobile LPSDR. The pin count is 90 and the data bus width is 32b. The sequential burst length is 1248FP and the interleaved burst length is 1248.
MT48H8M32LFF5-10 Features
Package / Case: 90-VFBGA
90 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT48H8M32LFF5-10 Applications
There are a lot of Micron Technology Inc.
MT48H8M32LFF5-10 Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT48H8M32LFF5-10 More Descriptions
IC SDRAM 256MBIT 100MHZ 90VFBGA
IC DRAM 256MBIT PARALLEL 90VFBGA
IC FLASH 128M PARALLEL 64EASYBGA
IC DRAM 256MBIT PARALLEL 90VFBGA
IC FLASH 128M PARALLEL 64EASYBGA
The three parts on the right have similar specifications to MT48H8M32LFF5-10.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRadiation HardeningRoHS StatusLead FreeFactory Lead TimeSeriesJESD-30 CodeOperating ModeMemory DensityWidthPbfree CodeView Compare
-
MT48H8M32LFF5-10Surface Mount90-VFBGAYES900°C~70°C TABox2005e0Discontinued2 (1 Year)90EAR99Tin/Lead (Sn/Pb)AUTO/SELF REFRESH8542.32.00.24SDRAM - Mobile LPSDR1.7V~1.95VBOTTOM23511.8V0.8mm30MT48H8M32901.8V1.9V1.7V256Mb 8M x 321Volatile100MHz0.17mA7nsDRAMParallel32b8MX323215ns14b256 Mb0.00001ACOMMON40961248FP12481mm13mmNoNon-RoHS CompliantContains Lead--------
-
Surface Mount86-TFSOP (0.400, 10.16mm Width)YES--40°C~105°C TABulk2013-Obsolete3 (168 Hours)86--AUTO/SELF REFRESH-SDRAM3V~3.6VDUAL-13.3V0.5mm-MT48LC2M32B2--3.6V3V64Mb 2M x 321Volatile167MHz-5.4nsDRAMParallel-2MX323212ns-------1.2mm22.22mm-ROHS3 Compliant-4 WeeksAutomotive, AEC-Q100R-PDSO-G86SYNCHRONOUS67108864 bit10.16mm-
-
Surface Mount54-TSOP (0.400, 10.16mm Width)---40°C~85°C TATape & Reel (TR)2006-Obsolete4 (72 Hours)-EAR99--8542.32.00.28SDRAM3V~3.6V------MT48LC32M16A254---512Mb 32M x 16-Volatile133MHz-5.4nsDRAMParallel---15ns----------ROHS3 Compliant-------yes
-
Surface Mount90-VFBGA---40°C~105°C TATape & Reel (TR)--Obsolete3 (168 Hours)-----SDRAM - Mobile LPSDR1.7V~1.95V-----------512Mb 16M x 32-Volatile166MHz-5nsDRAMParallel---15ns----------ROHS3 Compliant--------
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