Micron Technology Inc. MT29RZ4C8DZZMHAN-18W.80Y TR
- Part Number:
- MT29RZ4C8DZZMHAN-18W.80Y TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3235809-MT29RZ4C8DZZMHAN-18W.80Y TR
- Description:
- MCP 256MX16/256MX32 PLASTIC VFBG
- Datasheet:
- MT29RZ4C8DZZMHAN-18W.80Y TR
Micron Technology Inc. MT29RZ4C8DZZMHAN-18W.80Y TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29RZ4C8DZZMHAN-18W.80Y TR.
- Operating Temperature-25°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND, DRAM - LPDDR2
- Voltage - Supply1.8V
- Memory Size4Gb 256M x 16 N 4G 128M x 32 LPDDR2
- Memory TypeNon-Volatile
- Clock Frequency533MHz
- Memory FormatFLASH, RAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29RZ4C8DZZMHAN-18W.80Y TR Overview
There is a Non-Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. 4Gb 256M x 16 N 4G 128M x 32 LPDDR2 is the chip's memory size. FLASH, RAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.8V. In this memory, the clock frequency rotation is within an 533MHz range.
MT29RZ4C8DZZMHAN-18W.80Y TR Features
The part status of the memory component in question is currently listed as obsolete, indicating that it is no longer actively being produced or supported. However, despite this status, it still possesses impressive capabilities. The moisture sensitivity level (MSL) for this particular component is 3, meaning it can withstand exposure to moisture for up to 168 hours without any negative effects. The technology utilized in this memory component is FLASH-NAND for its non-volatile memory type and DRAM-LPDDR2 for its volatile memory type. It operates on a supply voltage of 1.8V and has a memory size of 4Gb, with a memory format of FLASH and RAM. Its clock frequency is 533MHz and it utilizes a parallel memory interface. Additionally, it is also compliant with the RoHS3 standard, ensuring that it is environmentally friendly.
MT29RZ4C8DZZMHAN-18W.80Y TR Applications
There are a lot of Micron Technology Inc.
MT29RZ4C8DZZMHAN-18W.80Y TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Non-Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. 4Gb 256M x 16 N 4G 128M x 32 LPDDR2 is the chip's memory size. FLASH, RAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.8V. In this memory, the clock frequency rotation is within an 533MHz range.
MT29RZ4C8DZZMHAN-18W.80Y TR Features
The part status of the memory component in question is currently listed as obsolete, indicating that it is no longer actively being produced or supported. However, despite this status, it still possesses impressive capabilities. The moisture sensitivity level (MSL) for this particular component is 3, meaning it can withstand exposure to moisture for up to 168 hours without any negative effects. The technology utilized in this memory component is FLASH-NAND for its non-volatile memory type and DRAM-LPDDR2 for its volatile memory type. It operates on a supply voltage of 1.8V and has a memory size of 4Gb, with a memory format of FLASH and RAM. Its clock frequency is 533MHz and it utilizes a parallel memory interface. Additionally, it is also compliant with the RoHS3 standard, ensuring that it is environmentally friendly.
MT29RZ4C8DZZMHAN-18W.80Y TR Applications
There are a lot of Micron Technology Inc.
MT29RZ4C8DZZMHAN-18W.80Y TR Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
MT29RZ4C8DZZMHAN-18W.80Y TR More Descriptions
Multichip Packages MASSFLASH/LPDDR2 12G
MCP 256MX16/256MX32 PLASTIC VFBG
IC FLASH RAM 4G PARALLEL 533MHZ
MCP 256MX16/256MX32 PLASTIC VFBG
IC FLASH RAM 4G PARALLEL 533MHZ
The three parts on the right have similar specifications to MT29RZ4C8DZZMHAN-18W.80Y TR.
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ImagePart NumberManufacturerOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusMounting TypePackage / CaseSeriesFactory Lead TimeSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29RZ4C8DZZMHAN-18W.80Y TR-25°C~85°C TATape & Reel (TR)Obsolete3 (168 Hours)FLASH - NAND, DRAM - LPDDR21.8V4Gb 256M x 16 N 4G 128M x 32 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 Compliant-------------------------
-
-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantSurface Mount162-VFBGAAutomotive, AEC-Q100---------------------
-
-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS CompliantSurface Mount130-VFBGA-16 WeeksYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel-Surface Mount162-VFBGA----------------------
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