Micron Technology Inc. MT29F32G08CBEDBL83A3WC1
- Part Number:
- MT29F32G08CBEDBL83A3WC1
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233548-MT29F32G08CBEDBL83A3WC1
- Description:
- IC FLASH 32GBIT WAFER
- ECAD Model:
-
- Datasheet:
- MT29F32G08CBEDBL83A3WC1
Micron Technology Inc. MT29F32G08CBEDBL83A3WC1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F32G08CBEDBL83A3WC1.
- Factory Lead Time3 Weeks
- Mounting TypeSurface Mount
- Package / CaseDie
- Supplier Device PackageDie
- Operating Temperature0°C~70°C TA
- PackagingBulk
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Max Operating Temperature70°C
- Min Operating Temperature0°C
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- InterfaceParallel
- Memory Size32Gb 4G x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F32G08CBEDBL83A3WC1 Overview
The package or case of a product is known as the Die, while the packaging is referred to as Bulk. The Moisture Sensitivity Level (MSL) of this particular product is 3, which means it can withstand exposure to moisture for up to 168 hours. The maximum operating temperature for this product is 70°C, while the minimum operating temperature is 0°C. The technology used in this product is FLASH - NAND, and the interface is Parallel. It has a memory size of 32Gb 4G x 8 and a memory format of FLASH. The memory interface is also Parallel, making it a reliable and efficient product for various applications.
MT29F32G08CBEDBL83A3WC1 Features
Package / Case: Die
MT29F32G08CBEDBL83A3WC1 Applications
There are a lot of Micron Technology Inc.
MT29F32G08CBEDBL83A3WC1 Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
The package or case of a product is known as the Die, while the packaging is referred to as Bulk. The Moisture Sensitivity Level (MSL) of this particular product is 3, which means it can withstand exposure to moisture for up to 168 hours. The maximum operating temperature for this product is 70°C, while the minimum operating temperature is 0°C. The technology used in this product is FLASH - NAND, and the interface is Parallel. It has a memory size of 32Gb 4G x 8 and a memory format of FLASH. The memory interface is also Parallel, making it a reliable and efficient product for various applications.
MT29F32G08CBEDBL83A3WC1 Features
Package / Case: Die
MT29F32G08CBEDBL83A3WC1 Applications
There are a lot of Micron Technology Inc.
MT29F32G08CBEDBL83A3WC1 Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F32G08CBEDBL83A3WC1 More Descriptions
MLC NAND Flash Parallel 3.3V 32Gbit 4G X 8bit Wafer
CMOS, 1.3S, 8-BIT ADC WITH VOLTAGE REFERENCE AND TRACK/HOLD
NAND Flash_MLC NAND Flash, 32Gb, 3.3V, Die, RoHSMicron SCT
L83A NAND FLASH 4GX8 DIE-COM 3.3V MASS STORAGE
CMOS, 1.3S, 8-BIT ADC WITH VOLTAGE REFERENCE AND TRACK/HOLD
NAND Flash_MLC NAND Flash, 32Gb, 3.3V, Die, RoHSMicron SCT
L83A NAND FLASH 4GX8 DIE-COM 3.3V MASS STORAGE
The three parts on the right have similar specifications to MT29F32G08CBEDBL83A3WC1.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyVoltage - SupplyInterfaceMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusSeriesClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F32G08CBEDBL83A3WC13 WeeksSurface MountDieDie0°C~70°C TABulkActive3 (168 Hours)70°C0°CFLASH - NAND2.7V~3.6VParallel32Gb 4G x 8Non-VolatileFLASHParallelROHS3 Compliant----------------------- -
-Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)--FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100533MHz--------------------
-
16 WeeksSurface Mount130-VFBGA--40°C~85°C TATrayActive---FLASH - NAND, Mobile LPDRAM1.7V~1.95V-1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS Compliant-200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA--40°C~85°C TATrayLast Time Buy3 (168 Hours)--FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel--533MHz--------------------
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
-
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