Micron Technology Inc. MT29F32G08CBCDBJ4-10:D TR
- Part Number:
- MT29F32G08CBCDBJ4-10:D TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3255361-MT29F32G08CBCDBJ4-10:D TR
- Description:
- IC FLASH 32GBIT 100MHZ 132VBGA
- Datasheet:
- MT29F32G08CBCDBJ4-10:D TR
Micron Technology Inc. MT29F32G08CBCDBJ4-10:D TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F32G08CBCDBJ4-10:D TR.
- Mounting TypeSurface Mount
- Package / Case132-VBGA
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Memory Size32Gb 4G x 8
- Memory TypeNon-Volatile
- Clock Frequency100MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F32G08CBCDBJ4-10:D TR Overview
This product comes in a 132-VBGA package and has an operating temperature range of 0°C to 70°C. It was published in 2016 and is currently listed as obsolete. The technology used is FLASH-NAND and it has a memory size of 32Gb, with a configuration of 4G x 8. The clock frequency is 100MHz and the memory format is FLASH. It has a parallel memory interface and is compliant with ROHS3 standards.
MT29F32G08CBCDBJ4-10:D TR Features
Package / Case: 132-VBGA
MT29F32G08CBCDBJ4-10:D TR Applications
There are a lot of Micron Technology Inc.
MT29F32G08CBCDBJ4-10:D TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
This product comes in a 132-VBGA package and has an operating temperature range of 0°C to 70°C. It was published in 2016 and is currently listed as obsolete. The technology used is FLASH-NAND and it has a memory size of 32Gb, with a configuration of 4G x 8. The clock frequency is 100MHz and the memory format is FLASH. It has a parallel memory interface and is compliant with ROHS3 standards.
MT29F32G08CBCDBJ4-10:D TR Features
Package / Case: 132-VBGA
MT29F32G08CBCDBJ4-10:D TR Applications
There are a lot of Micron Technology Inc.
MT29F32G08CBCDBJ4-10:D TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT29F32G08CBCDBJ4-10:D TR More Descriptions
IC FLASH NAND 4GX8 VBGA
REEL / 8K BIT I2C SERIAL EEPROM
IC FLASH 32G PARALLEL 100MHZ
REEL / 8K BIT I2C SERIAL EEPROM
IC FLASH 32G PARALLEL 100MHZ
The three parts on the right have similar specifications to MT29F32G08CBCDBJ4-10:D TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSeriesFactory Lead TimeSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F32G08CBCDBJ4-10:D TRSurface Mount132-VBGA0°C~70°C TATape & Reel (TR)2016Obsolete3 (168 Hours)FLASH - NAND2.7V~3.6V32Gb 4G x 8Non-Volatile100MHzFLASHParallelROHS3 Compliant-----------------------
-
Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)-Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100---------------------
-
Surface Mount130-VFBGA-40°C~85°C TATray-Active-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant-16 WeeksYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
Surface Mount162-VFBGA-40°C~85°C TATray-Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel-----------------------
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