Micron Technology Inc. MT29F32G08CBACAL73A3WC1P
- Part Number:
- MT29F32G08CBACAL73A3WC1P
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233498-MT29F32G08CBACAL73A3WC1P
- Description:
- IC FLASH 32GBIT WAFER
- ECAD Model:
-
- Datasheet:
- MT29F32G08CBACAL73A3WC1P
Micron Technology Inc. MT29F32G08CBACAL73A3WC1P technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F32G08CBACAL73A3WC1P.
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / CaseDie
- Supplier Device PackageDie
- Operating Temperature0°C~70°C TA
- PackagingBulk
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Max Operating Temperature70°C
- Min Operating Temperature0°C
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- InterfaceParallel
- Memory Size32Gb 4G x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F32G08CBACAL73A3WC1P Overview
The device package, also known as the die, is a crucial component in electronic devices. It houses the integrated circuit or chip and provides protection and connection to the outside world. The supplier of the die is responsible for ensuring its quality and functionality. The operating temperature for this particular device package is 0°C to 70°C, making it suitable for use in a wide range of environments. With an active part status, this die is readily available for purchase. It can operate at a maximum temperature of 70°C and requires a voltage supply of 2.7V to 3.6V. The interface for this die is parallel, allowing for efficient data transfer. The memory type is non-volatile, meaning it retains data even when power is turned off. The memory format is FLASH, which provides fast read and write speeds. This die is also ROHS3 compliant, ensuring it meets the latest environmental regulations.
MT29F32G08CBACAL73A3WC1P Features
Package / Case: Die
MT29F32G08CBACAL73A3WC1P Applications
There are a lot of Micron Technology Inc.
MT29F32G08CBACAL73A3WC1P Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The device package, also known as the die, is a crucial component in electronic devices. It houses the integrated circuit or chip and provides protection and connection to the outside world. The supplier of the die is responsible for ensuring its quality and functionality. The operating temperature for this particular device package is 0°C to 70°C, making it suitable for use in a wide range of environments. With an active part status, this die is readily available for purchase. It can operate at a maximum temperature of 70°C and requires a voltage supply of 2.7V to 3.6V. The interface for this die is parallel, allowing for efficient data transfer. The memory type is non-volatile, meaning it retains data even when power is turned off. The memory format is FLASH, which provides fast read and write speeds. This die is also ROHS3 compliant, ensuring it meets the latest environmental regulations.
MT29F32G08CBACAL73A3WC1P Features
Package / Case: Die
MT29F32G08CBACAL73A3WC1P Applications
There are a lot of Micron Technology Inc.
MT29F32G08CBACAL73A3WC1P Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT29F32G08CBACAL73A3WC1P More Descriptions
MLC NAND Flash Parallel 3.3V 32Gbit 4G X 8bit Wafer
NAND Flash_MLC NAND Flash, 32Gb, 3.3V, Wafer, RoHSMicron SCT
IC DRAM 512M PARALLEL 60FBGA
NAND Flash MLC 32G Die 4GX8
IC FLASH 32GBIT PARALLEL DIE
NAND Flash_MLC NAND Flash, 32Gb, 3.3V, Wafer, RoHSMicron SCT
IC DRAM 512M PARALLEL 60FBGA
NAND Flash MLC 32G Die 4GX8
IC FLASH 32GBIT PARALLEL DIE
The three parts on the right have similar specifications to MT29F32G08CBACAL73A3WC1P.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyVoltage - SupplyInterfaceMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusSeriesClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
-
MT29F32G08CBACAL73A3WC1P6 WeeksSurface MountDieDie0°C~70°C TABulkActive3 (168 Hours)70°C0°CFLASH - NAND2.7V~3.6VParallel32Gb 4G x 8Non-VolatileFLASHParallelROHS3 Compliant----------------------- -
-Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)--FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100533MHz--------------------
-
16 WeeksSurface Mount130-VFBGA--40°C~85°C TATrayActive---FLASH - NAND, Mobile LPDRAM1.7V~1.95V-1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS Compliant-200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA--40°C~85°C TATrayLast Time Buy3 (168 Hours)--FLASH - NAND, Mobile LPDRAM1.7V~1.9V-4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel--533MHz--------------------
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
-
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