Micron Technology Inc. MT29F2G08ABBEAHC:E TR
- Part Number:
- MT29F2G08ABBEAHC:E TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3226912-MT29F2G08ABBEAHC:E TR
- Description:
- IC FLASH 2GBIT 63VFBGA
- ECAD Model:
-
- Datasheet:
- MT29F2G08ABBEAHC:E TR
Micron Technology Inc. MT29F2G08ABBEAHC:E TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F2G08ABBEAHC:E TR.
- Factory Lead Time3 Weeks
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Surface MountYES
- Operating Temperature0°C~70°C TA
- PackagingDigi-Reel®
- Published2013
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations63
- Terminal FinishTIN SILVER COPPER
- TechnologyFLASH - NAND
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Base Part NumberMT29F1G08
- Pin Count63
- JESD-30 CodeR-PBGA-B63
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size2Gb 256M x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization256MX8
- Memory Width8
- Memory Density2147483648 bit
- Programming Voltage1.8V
- Height Seated (Max)1mm
- Length13mm
- Width10.5mm
- RoHS StatusROHS3 Compliant
MT29F2G08ABBEAHC:E TR Overview
The packaging used for this particular product is the Digi-Reel®, which is designed to provide efficient and safe handling during transportation and storage. The JESD-609 Code, e1, indicates that this product meets the industry standards for electrostatic discharge (ESD) sensitivity. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), this product can withstand exposure to moisture for up to 168 hours without any negative impact on its performance. It has 63 terminations, making it suitable for a wide range of applications. This product utilizes FLASH - NAND technology and is classified under the JESD-30 Code R-PBGA-B63. With a memory size of 2Gb 256M x 8 and an organization of 256MX8, it offers a memory density of 2147483648 bits. Furthermore, it is also compliant with RoHS3 standards, ensuring its environmental friendliness.
MT29F2G08ABBEAHC:E TR Features
Package / Case: 63-VFBGA
MT29F2G08ABBEAHC:E TR Applications
There are a lot of Micron Technology Inc.
MT29F2G08ABBEAHC:E TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The packaging used for this particular product is the Digi-Reel®, which is designed to provide efficient and safe handling during transportation and storage. The JESD-609 Code, e1, indicates that this product meets the industry standards for electrostatic discharge (ESD) sensitivity. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), this product can withstand exposure to moisture for up to 168 hours without any negative impact on its performance. It has 63 terminations, making it suitable for a wide range of applications. This product utilizes FLASH - NAND technology and is classified under the JESD-30 Code R-PBGA-B63. With a memory size of 2Gb 256M x 8 and an organization of 256MX8, it offers a memory density of 2147483648 bits. Furthermore, it is also compliant with RoHS3 standards, ensuring its environmental friendliness.
MT29F2G08ABBEAHC:E TR Features
Package / Case: 63-VFBGA
MT29F2G08ABBEAHC:E TR Applications
There are a lot of Micron Technology Inc.
MT29F2G08ABBEAHC:E TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT29F2G08ABBEAHC:E TR More Descriptions
256MX8 NAND FLASH PLASTIC PBF VBGA 1.8V ASYNCH/PAGE READ MAS
EEPROM Parallel 64K-Bit 8K x 8 5V 28-Pin TSOP
IC FLASH 2GBIT PARALLEL 63VFBGA
EEPROM Parallel 64K-Bit 8K x 8 5V 28-Pin TSOP
IC FLASH 2GBIT PARALLEL 63VFBGA
The three parts on the right have similar specifications to MT29F2G08ABBEAHC:E TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberPin CountJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusSeriesClock FrequencyAdditional FeaturePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)View Compare
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MT29F2G08ABBEAHC:E TR3 WeeksSurface Mount63-VFBGAYES0°C~70°C TADigi-Reel®2013e1Obsolete3 (168 Hours)63TIN SILVER COPPERFLASH - NAND1.7V~1.95VBOTTOM11.8V0.8mmMT29F1G0863R-PBGA-B631.95V1.7V2Gb 256M x 8Non-VolatileASYNCHRONOUSFLASHParallel256MX882147483648 bit1.8V1mm13mm10.5mmROHS3 Compliant------- -
-Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)--Last Time Buy3 (168 Hours)--FLASH - NAND, Mobile LPDRAM1.7V~1.9V---------4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile-FLASH, RAMParallel-------ROHS3 CompliantAutomotive, AEC-Q100533MHz----
-
16 WeeksSurface Mount130-VFBGAYES-40°C~85°C TATray--Active-130-FLASH - NAND, Mobile LPDRAM1.7V~1.95VBOTTOM11.8V0.65mm--R-PBGA-B1301.95V1.7V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileSYNCHRONOUSFLASH, RAMParallel128MX881073741824 bit-1mm9mm8mmRoHS Compliant-200MHzLPDRAM IS ORGANISED AS 32M X 16NOT SPECIFIEDcompliantNOT SPECIFIED
-
-Surface Mount162-VFBGA--40°C~85°C TATray--Last Time Buy3 (168 Hours)--FLASH - NAND, Mobile LPDRAM1.7V~1.9V---------4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile-FLASH, RAMParallel---------533MHz----
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
-
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