MT29F256G08EFEBBWP:B

Micron Technology Inc. MT29F256G08EFEBBWP:B

Part Number:
MT29F256G08EFEBBWP:B
Manufacturer:
Micron Technology Inc.
Ventron No:
4547055-MT29F256G08EFEBBWP:B
Description:
IC FLASH 256GBIT 48TSOP
ECAD Model:
Datasheet:
MT29F256G08EFEBBWP:B

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Specifications
Micron Technology Inc. MT29F256G08EFEBBWP:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F256G08EFEBBWP:B.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    48-TFSOP (0.724, 18.40mm Width)
  • Supplier Device Package
    48-TSOP I
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tray
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    FLASH - NAND
  • Voltage - Supply
    2.7V~3.6V
  • Operating Supply Voltage
    3.3V
  • Memory Size
    256Gb 32G x 8
  • Memory Type
    Non-Volatile
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • RoHS Status
    ROHS3 Compliant
Description
MT29F256G08EFEBBWP:B Overview
The package or case for this particular device is a 48-TFSOP with a width of 0.724 inches or 18.40mm. The supplier device package is a 48-TSOP I and the packaging method used is a tray. However, it is important to note that the part status for this device is now considered obsolete. This means that it is no longer being manufactured or sold. Additionally, the moisture sensitivity level (MSL) for this device is 3, which indicates that it can withstand up to 168 hours of exposure to moisture. The technology used for this device is FLASH-NAND, and it has a memory size of 256Gb 32G x 8. The memory type is non-volatile, meaning it retains its data even when power is turned off. The memory format is FLASH, and this device is also compliant with ROHS3 standards.

MT29F256G08EFEBBWP:B Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
Operating Supply Voltage:3.3V


MT29F256G08EFEBBWP:B Applications
There are a lot of Micron Technology Inc.
MT29F256G08EFEBBWP:B Memory applications.


supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT29F256G08EFEBBWP:B More Descriptions
NAND Flash, TLC NAND Flash, 256Gb, 3.3V, 48-pin TSOP, RoHSMicron SCT
IC FLASH 256G PARALLEL 48TSOP
IC FLASH 256GBIT PAR 48TSOP I
IC DRAM 32G 1866MHZ FBGA
TLC 256G 32GX8 TSOP DDP
Product Comparison
The three parts on the right have similar specifications to MT29F256G08EFEBBWP:B.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Operating Supply Voltage
    Memory Size
    Memory Type
    Memory Format
    Memory Interface
    RoHS Status
    Series
    Clock Frequency
    Surface Mount
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Operating Mode
    Organization
    Memory Width
    Memory Density
    Height Seated (Max)
    Length
    Width
    View Compare
  • MT29F256G08EFEBBWP:B
    MT29F256G08EFEBBWP:B
    4 Weeks
    Surface Mount
    48-TFSOP (0.724, 18.40mm Width)
    48-TSOP I
    0°C~70°C TA
    Tray
    Obsolete
    3 (168 Hours)
    FLASH - NAND
    2.7V~3.6V
    3.3V
    256Gb 32G x 8
    Non-Volatile
    FLASH
    Parallel
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29AZ5A3CHHWD-18AAT.84F TR
    -
    Surface Mount
    162-VFBGA
    -
    -40°C~105°C TA
    Tape & Reel (TR)
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    -
    4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2
    Non-Volatile
    FLASH, RAM
    Parallel
    ROHS3 Compliant
    Automotive, AEC-Q100
    533MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29C1G12MAAIYAMR-5 AIT
    16 Weeks
    Surface Mount
    130-VFBGA
    -
    -40°C~85°C TA
    Tray
    Active
    -
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.95V
    -
    1Gb 128M x 8 N 512M 16M x 32 LPDRAM
    Non-Volatile
    FLASH, RAM
    Parallel
    RoHS Compliant
    -
    200MHz
    YES
    130
    LPDRAM IS ORGANISED AS 32M X 16
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.65mm
    compliant
    NOT SPECIFIED
    R-PBGA-B130
    1.95V
    1.7V
    SYNCHRONOUS
    128MX8
    8
    1073741824 bit
    1mm
    9mm
    8mm
  • MT29AZ5A3CHHWD-18AIT.84F
    -
    Surface Mount
    162-VFBGA
    -
    -40°C~85°C TA
    Tray
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    -
    4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2
    Non-Volatile
    FLASH, RAM
    Parallel
    -
    -
    533MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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