Micron Technology Inc. MT29F256G08CMCBBH2-10IT:B TR
- Part Number:
- MT29F256G08CMCBBH2-10IT:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3736476-MT29F256G08CMCBBH2-10IT:B TR
- Description:
- IC FLASH 256GBIT 100MHZ 100TBGA
- Datasheet:
- MT29F256G08CMCBBH2-10IT:B TR
Micron Technology Inc. MT29F256G08CMCBBH2-10IT:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F256G08CMCBBH2-10IT:B TR.
- Mounting TypeSurface Mount
- Package / Case100-TBGA
- Supplier Device Package100-TBGA (12x18)
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Memory Size256Gb 32G x 8
- Memory TypeNon-Volatile
- Clock Frequency100MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F256G08CMCBBH2-10IT:B TR Overview
The package or case for this particular device is a 100-TBGA, which stands for "Thin Ball Grid Array" and refers to the type of packaging used for the integrated circuit. The supplier device package is also a 100-TBGA, but with the added dimensions of 12x18. This device is designed to operate in a wide range of temperatures, from -40°C to 85°C, making it suitable for use in various environments. The packaging used for this device is Tape & Reel (TR), which is a common method for shipping and storing electronic components. The technology used in this device is FLASH - NAND, which is a type of non-volatile memory that can retain data even when the power is turned off. The voltage supply for this device ranges from 2.7V to 3.6V, and the memory type is FLASH, which is a type of non-volatile memory that can be electrically erased and reprogrammed. The memory format is also FLASH, and the memory interface is parallel, meaning that data is transferred in parallel using multiple data lines. This device is also RoHS3 compliant, meaning that it meets the requirements of the Restriction of Hazardous Substances directive.
MT29F256G08CMCBBH2-10IT:B TR Features
Package / Case: 100-TBGA
MT29F256G08CMCBBH2-10IT:B TR Applications
There are a lot of Micron Technology Inc.
MT29F256G08CMCBBH2-10IT:B TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
The package or case for this particular device is a 100-TBGA, which stands for "Thin Ball Grid Array" and refers to the type of packaging used for the integrated circuit. The supplier device package is also a 100-TBGA, but with the added dimensions of 12x18. This device is designed to operate in a wide range of temperatures, from -40°C to 85°C, making it suitable for use in various environments. The packaging used for this device is Tape & Reel (TR), which is a common method for shipping and storing electronic components. The technology used in this device is FLASH - NAND, which is a type of non-volatile memory that can retain data even when the power is turned off. The voltage supply for this device ranges from 2.7V to 3.6V, and the memory type is FLASH, which is a type of non-volatile memory that can be electrically erased and reprogrammed. The memory format is also FLASH, and the memory interface is parallel, meaning that data is transferred in parallel using multiple data lines. This device is also RoHS3 compliant, meaning that it meets the requirements of the Restriction of Hazardous Substances directive.
MT29F256G08CMCBBH2-10IT:B TR Features
Package / Case: 100-TBGA
MT29F256G08CMCBBH2-10IT:B TR Applications
There are a lot of Micron Technology Inc.
MT29F256G08CMCBBH2-10IT:B TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F256G08CMCBBH2-10IT:B TR More Descriptions
IC FLASH 256GBIT 100MHZ 100TBGA
IC EEPROM 64K PARALLEL 28DIP
IC FLASH 256G PARALLEL 100MHZ
IC EEPROM 64K PARALLEL 28DIP
IC FLASH 256G PARALLEL 100MHZ
The three parts on the right have similar specifications to MT29F256G08CMCBBH2-10IT:B TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSeriesFactory Lead TimeSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F256G08CMCBBH2-10IT:B TRSurface Mount100-TBGA100-TBGA (12x18)-40°C~85°C TATape & Reel (TR)Obsolete3 (168 Hours)FLASH - NAND2.7V~3.6V256Gb 32G x 8Non-Volatile100MHzFLASHParallelROHS3 Compliant-----------------------
-
Surface Mount162-VFBGA--40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100---------------------
-
Surface Mount130-VFBGA--40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant-16 WeeksYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
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Surface Mount162-VFBGA--40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel-----------------------
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