Micron Technology Inc. MT29F1T208EGHBBG1-3R:B TR
- Part Number:
- MT29F1T208EGHBBG1-3R:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3237464-MT29F1T208EGHBBG1-3R:B TR
- Description:
- IC FLASH 1.125TBIT 333MHZ 272BGA
- Datasheet:
- MT29F1T208EGHBBG1-3R:B TR
Micron Technology Inc. MT29F1T208EGHBBG1-3R:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F1T208EGHBBG1-3R:B TR.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case272-VFBGA
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.5V~3.6V
- Memory Size1.125Tb 144G x 8
- Memory TypeNon-Volatile
- Clock Frequency333MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F1T208EGHBBG1-3R:B TR Overview
The product features a surface mount mounting type and a 272-VFBGA package/case, making it suitable for a variety of applications. It has an operating temperature range of 0°C to 70°C TA, ensuring reliable performance in different environments. This product is currently active and has a moisture sensitivity level of 3 (168 hours), ensuring its durability and longevity. With a voltage supply of 2.5V to 3.6V, it offers efficient and stable power delivery. The memory size of 1.125Tb 144G x 8 and non-volatile memory type make it ideal for storing large amounts of data. Its flash memory format and parallel memory interface provide fast and efficient data transfer.
MT29F1T208EGHBBG1-3R:B TR Features
Package / Case: 272-VFBGA
MT29F1T208EGHBBG1-3R:B TR Applications
There are a lot of Micron Technology Inc.
MT29F1T208EGHBBG1-3R:B TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The product features a surface mount mounting type and a 272-VFBGA package/case, making it suitable for a variety of applications. It has an operating temperature range of 0°C to 70°C TA, ensuring reliable performance in different environments. This product is currently active and has a moisture sensitivity level of 3 (168 hours), ensuring its durability and longevity. With a voltage supply of 2.5V to 3.6V, it offers efficient and stable power delivery. The memory size of 1.125Tb 144G x 8 and non-volatile memory type make it ideal for storing large amounts of data. Its flash memory format and parallel memory interface provide fast and efficient data transfer.
MT29F1T208EGHBBG1-3R:B TR Features
Package / Case: 272-VFBGA
MT29F1T208EGHBBG1-3R:B TR Applications
There are a lot of Micron Technology Inc.
MT29F1T208EGHBBG1-3R:B TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT29F1T208EGHBBG1-3R:B TR More Descriptions
IC FLASH 1.125T PARALLEL 272VBGA
Product Description Demo for Development.
IC NVSRAM 256K PARALLEL 34LPM
Product Description Demo for Development.
IC NVSRAM 256K PARALLEL 34LPM
The three parts on the right have similar specifications to MT29F1T208EGHBBG1-3R:B TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSeriesSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F1T208EGHBBG1-3R:B TR10 WeeksSurface Mount272-VFBGA0°C~70°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.5V~3.6V1.125Tb 144G x 8Non-Volatile333MHzFLASHParallelROHS3 Compliant----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant-YES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
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-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel----------------------
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