Micron Technology Inc. MT28F800B3WG-9 B
- Part Number:
- MT28F800B3WG-9 B
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3239861-MT28F800B3WG-9 B
- Description:
- IC FLASH 8MBIT 90NS 48TSOP
- ECAD Model:
-
- Datasheet:
- MT28F008B3, 800B3
Micron Technology Inc. MT28F800B3WG-9 B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT28F800B3WG-9 B.
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2002
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations48
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional Feature100,000 ERASE CYCLES; BOTTOM BOOT BLOCK
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply3V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)235
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.5mm
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT28F800B3
- Pin Count48
- JESD-30 CodeR-PDSO-G48
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3.3V
- Supply Voltage-Min (Vsup)3V
- Memory Size8Mb 1M x 8 512K x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Supply Current-Max0.025mA
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization512KX16
- Memory Width16
- Write Cycle Time - Word, Page90ns
- Standby Current-Max0.000005A
- Memory Density8388608 bit
- Access Time (Max)90 ns
- Programming Voltage3V
- Endurance100000 Write/Erase Cycles
- Alternate Memory Width8
- Data PollingNO
- Toggle BitNO
- Command User InterfaceYES
- Number of Sectors/Size1217
- Sector Size16K8K96K128K
- Boot BlockBOTTOM
- Height Seated (Max)1.2mm
- Length18.4mm
- Width12mm
- RoHS StatusNon-RoHS Compliant
MT28F800B3WG-9 B Overview
This product comes in a 48-TFSOP package with dimensions of 0.724mm and 18.40mm in width. It has a JESD-609 Code of e0 and is currently listed as obsolete. The ECCN Code for this product is EAR99, and it utilizes FLASH - NOR technology. The minimum supply voltage required is 3V, and the write cycle time for a word or page is 90ns. It does not support data polling. The boot block is located at the bottom of the device, and the maximum seated height is 1.2mm.
MT28F800B3WG-9 B Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
Additional Feature:100,000 ERASE CYCLES; BOTTOM BOOT BLOCK
MT28F800B3WG-9 B Applications
There are a lot of Micron Technology Inc.
MT28F800B3WG-9 B Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
This product comes in a 48-TFSOP package with dimensions of 0.724mm and 18.40mm in width. It has a JESD-609 Code of e0 and is currently listed as obsolete. The ECCN Code for this product is EAR99, and it utilizes FLASH - NOR technology. The minimum supply voltage required is 3V, and the write cycle time for a word or page is 90ns. It does not support data polling. The boot block is located at the bottom of the device, and the maximum seated height is 1.2mm.
MT28F800B3WG-9 B Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
Additional Feature:100,000 ERASE CYCLES; BOTTOM BOOT BLOCK
MT28F800B3WG-9 B Applications
There are a lot of Micron Technology Inc.
MT28F800B3WG-9 B Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The three parts on the right have similar specifications to MT28F800B3WG-9 B.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeSupply Current-MaxMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityAccess Time (Max)Programming VoltageEnduranceAlternate Memory WidthData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizeBoot BlockHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeSeriesAccess TimeView Compare
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MT28F800B3WG-9 BSurface Mount48-TFSOP (0.724, 18.40mm Width)YES0°C~70°C TATray2002e0Obsolete1 (Unlimited)48EAR99Tin/Lead (Sn/Pb)100,000 ERASE CYCLES; BOTTOM BOOT BLOCK8542.32.00.51FLASH - NOR3V~3.6VDUAL23513.3V0.5mmnot_compliant30MT28F800B348R-PDSO-G48Not Qualified3.6V3.3V3V8Mb 1M x 8 512K x 16Non-VolatileASYNCHRONOUS0.025mAFLASHParallel512KX161690ns0.000005A8388608 bit90 ns3V100000 Write/Erase Cycles8NONOYES121716K8K96K128KBOTTOM1.2mm18.4mm12mmNon-RoHS Compliant---- -
Surface Mount64-LBGAYES-40°C~105°C TABulk--Active-64----FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mm-NOT SPECIFIED--R-PBGA-B64-3.6V-2.7V1Gb 128M x 8 64M x 16Non-VolatileASYNCHRONOUS-FLASHParallel64MX161660ns-1073741824 bit-3V--------1.4mm13mm11mmRoHS Compliant9 WeeksAutomotive, AEC-Q100105ns
-
Surface Mount56-TFSOP (0.724, 18.40mm Width)YES-40°C~105°C TABulk--Active-56----FLASH - NOR2.7V~3.6VDUALNOT SPECIFIED13V0.5mm-NOT SPECIFIED--R-PDSO-G56-3.6V-2.7V1Gb 128M x 8 64M x 16Non-VolatileASYNCHRONOUS-FLASHParallel64MX161660ns-1073741824 bit-3V--------1.2mm18.4mm14mmRoHS Compliant6 WeeksAutomotive, AEC-Q100105ns
-
Surface Mount64-LBGAYES-40°C~105°C TATray--Active3 (168 Hours)64----FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mm-NOT SPECIFIED--R-PBGA-B64-3.6V-2.7V512Mb 64M x 8 32M x 16Non-VolatileASYNCHRONOUS-FLASHParallel32MX161660ns-536870912 bit-3V-8------1.4mm13mm11mmROHS3 Compliant8 WeeksAutomotive, AEC-Q100105ns
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 13mm mm
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 18.4mm mm
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 18.4mm mm
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 13mm mm
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