MSS2P3-M3/89A

Vishay Semiconductor Diodes Division MSS2P3-M3/89A

Part Number:
MSS2P3-M3/89A
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2824253-MSS2P3-M3/89A
Description:
DIODE SCHOTTKY 30V 2A MICROSMP
ECAD Model:
Datasheet:
MSS2P3-M3/89A

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Specifications
Vishay Semiconductor Diodes Division MSS2P3-M3/89A technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division MSS2P3-M3/89A.
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    DO-219AD
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Manufacturer Package Identifier
    MSS2P3-M3/89A
  • Packaging
    Tape & Reel (TR)
  • Series
    eSMP®
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    FREE WHEELING DIODE, LOW POWER LOSS
  • HTS Code
    8541.10.00.80
  • Capacitance
    65pF
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Base Part Number
    MSS2P3
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    250μA @ 30V
  • Voltage - Forward (Vf) (Max) @ If
    600mV @ 2A
  • Case Connection
    CATHODE
  • Forward Current
    2A
  • Max Reverse Leakage Current
    250μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    30A
  • Output Current-Max
    2A
  • Application
    EFFICIENCY
  • Forward Voltage
    600mV
  • Max Reverse Voltage (DC)
    30V
  • Average Rectified Current
    2A
  • Number of Phases
    1
  • Peak Reverse Current
    250μA
  • Max Repetitive Reverse Voltage (Vrrm)
    30V
  • Capacitance @ Vr, F
    65pF @ 4V 1MHz
  • Peak Non-Repetitive Surge Current
    30A
  • Max Forward Surge Current (Ifsm)
    30A
  • Max Junction Temperature (Tj)
    150°C
  • Height
    730μm
  • Length
    2.3mm
  • Width
    1.4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MSS2P3-M3/89A Overview
A reverse leakage current of 250μA volts can be generated by this device.A rectified current of 2A volts is averaged for this device.A value of 2A is the maximum forward current that can be allowed.30A is the maximum value of surge current.A device that has a capacitance of 65pF can provide a value of 65pF.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 2A.As indicated by the data chart in the datasheets, the peak reverse is 250μA.

MSS2P3-M3/89A Features
a maximal reverse leakage current of 250μA volts
an average rectified current of 2A volts
2A is the maximum value
the peak reverse is 250μA


MSS2P3-M3/89A Applications
There are a lot of Vishay Semiconductor Diodes Division
MSS2P3-M3/89A applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MSS2P3-M3/89A More Descriptions
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, DO-219AD
MSS2P3-M3/89A Vishay Rectifier Diode Schottky 2A 30V Silicon DO-219AD RoHS
MSS2P3 Series 30 V 2 A Surface Mount Schottky Barrier Rectifier - MicroSMP
Rectifier Diode Schottky 30V 2A 2-Pin Micro SMP T/R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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