NXP USA Inc. MRFE6VP6300HR5
- Part Number:
- MRFE6VP6300HR5
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2474752-MRFE6VP6300HR5
- Description:
- FET RF 2CH 130V 230MHZ NI780-4
- ECAD Model:
-
- Datasheet:
- MRFE6VP6300HR5
NXP USA Inc. MRFE6VP6300HR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRFE6VP6300HR5.
- Factory Lead Time10 Weeks
- Package / CaseNI780-4
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated130V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency230MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRFE6VP6300
- JESD-30 CodeR-CDFM-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test100mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual)
- Gain26.5dB
- DS Breakdown Voltage-Min130V
- Power - Output300W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRFE6VP6300HR5 Description
MRFE6VP6300HR5 is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes MRFE6VP6300HR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRFE6VP6300HR5 has the common source configuration.
MRFE6VP6300HR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRFE6VP6300HR5 Applications
ISM applications
DC large signal applications
MRFE6VP6300HR5 More Descriptions
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHSNXP Semiconductors SCT
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHSNXP Semiconductors SCT
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes
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