M/A-Com Technology Solutions MRF422
- Part Number:
- MRF422
- Manufacturer:
- M/A-Com Technology Solutions
- Ventron No:
- 2465522-MRF422
- Description:
- TRANS RF NPN 35V 20A 211-11
- ECAD Model:
-
- Datasheet:
- MRF422
M/A-Com Technology Solutions MRF422 technical specifications, attributes, parameters and parts with similar specifications to M/A-Com Technology Solutions MRF422.
- Factory Lead Time20 Weeks
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / Case211-11, Style 2
- Number of Pins4
- PackagingTray
- Published2009
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Max Power Dissipation290W
- Terminal PositionRADIAL
- Terminal FormFLAT
- Frequency30MHz
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation290W
- Output Power150W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current20A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5A 5V
- Collector Emitter Breakdown Voltage35V
- Gain13dB
- Collector Base Voltage (VCBO)85V
- Emitter Base Voltage (VEBO)3V
- hFE Min15
- Continuous Collector Current20A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The MA-COM MRF422 is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It has a maximum voltage rating of 35V and a maximum frequency rating of 211-11MHz. It is designed to provide high gain and low noise performance in a wide range of RF applications.
Features of the MA-COM MRF422 include a low noise figure of 1.5dB, a high gain of 15dB, and a high power output of up to 10W. It also has a high breakdown voltage of 35V and a low thermal resistance of 0.5°C/W.
Applications of the MA-COM MRF422 include RF amplifiers, RF power amplifiers, RF oscillators, RF mixers, and RF switches. It is also suitable for use in wireless communication systems, such as cellular phones, Wi-Fi, and Bluetooth.
Features of the MA-COM MRF422 include a low noise figure of 1.5dB, a high gain of 15dB, and a high power output of up to 10W. It also has a high breakdown voltage of 35V and a low thermal resistance of 0.5°C/W.
Applications of the MA-COM MRF422 include RF amplifiers, RF power amplifiers, RF oscillators, RF mixers, and RF switches. It is also suitable for use in wireless communication systems, such as cellular phones, Wi-Fi, and Bluetooth.
MRF422 More Descriptions
Trans GP BJT NPN 40V 20A 4-Pin Case 211-11
RF TRANS NPN 35V 211-11
Product Description Demo for Development.
RF POWER TRANSISTOR
RF TRANS NPN 35V 211-11
Product Description Demo for Development.
RF POWER TRANSISTOR
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