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MPSA42,412

NXP USA Inc. MPSA42,412

Part Number:
MPSA42,412
Manufacturer:
NXP USA Inc.
Ventron No:
2468478-MPSA42,412
Description:
TRANS NPN 300V 0.1A SOT54
ECAD Model:
Datasheet:
MPSA4(2,3)

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Comments
Specifications
NXP USA Inc. MPSA42,412 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MPSA42,412.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Bulk
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    MPSA42
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    500mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 30mA 10V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 2mA, 20mA
  • Voltage - Collector Emitter Breakdown (Max)
    300V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    50MHz
  • Frequency - Transition
    50MHz
  • Power Dissipation-Max (Abs)
    0.625W
  • VCEsat-Max
    0.5 V
  • Collector-Base Capacitance-Max
    3pF
  • RoHS Status
    ROHS3 Compliant
Description
MPSA42,412 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The part has a transition frequency of 50MHz.Device displays Collector Emitter Breakdown (300V maximal voltage).

MPSA42,412 Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz


MPSA42,412 Applications
There are a lot of NXP USA Inc.
MPSA42,412 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MPSA42,412 More Descriptions
Trans GP BJT NPN 300V 0.1A 3-Pin SPT Bulk
NPN HIGH-VOLTAGE TRANSISTOR
TRANS NPN 300V 0.1A SOT54
IC REG LINEAR 2.8V 150MA SC82AB
Product Comparison
The three parts on the right have similar specifications to MPSA42,412.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Power Dissipation-Max (Abs)
    VCEsat-Max
    Collector-Base Capacitance-Max
    RoHS Status
    Lifecycle Status
    Mount
    Number of Pins
    Published
    Pbfree Code
    Voltage - Rated DC
    Max Power Dissipation
    Polarity
    Element Configuration
    Power Dissipation
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Emitter Base Voltage (VEBO)
    hFE Min
    Lead Free
    Factory Lead Time
    Max Operating Temperature
    Min Operating Temperature
    Power Dissipation-Max
    Gain Bandwidth Product
    Collector Base Voltage (VCBO)
    DC Current Gain-Min (hFE)
    Continuous Collector Current
    View Compare
  • MPSA42,412
    MPSA42,412
    NXP USA Inc.
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    SILICON
    150°C TJ
    Bulk
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    8541.21.00.95
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    MPSA42
    3
    O-PBCY-T3
    Not Qualified
    1
    SINGLE
    500mW
    AMPLIFIER
    NPN
    NPN
    40 @ 30mA 10V
    100nA ICBO
    500mV @ 2mA, 20mA
    300V
    100mA
    50MHz
    50MHz
    0.625W
    0.5 V
    3pF
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MPSA12G
    MPSA12G
    ON Semiconductor
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    SILICON
    -55°C~150°C TJ
    Bulk
    e1
    Obsolete
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    -
    NOT SPECIFIED
    MPSA12
    3
    -
    Not Qualified
    1
    -
    -
    -
    -
    NPN - Darlington
    20000 @ 10mA 5V
    100nA ICBO
    1V @ 10μA, 10mA
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    OBSOLETE (Last Updated: 2 weeks ago)
    Through Hole
    3
    2002
    yes
    20V
    625mW
    NPN
    Single
    625mW
    20V
    100nA
    20V
    1V
    10V
    20000
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    MPSA42,412 vs MPSA12G
  • MPSA12RLRAG
    MPSA12RLRAG
    ON Semiconductor
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e1
    Obsolete
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    -
    NOT SPECIFIED
    MPSA12
    3
    -
    Not Qualified
    1
    -
    -
    -
    -
    NPN - Darlington
    20000 @ 10mA 5V
    100nA ICBO
    1V @ 10μA, 10mA
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    LAST SHIPMENTS (Last Updated: 1 week ago)
    Through Hole
    3
    2002
    yes
    20V
    625mW
    NPN
    Single
    625mW
    20V
    100nA
    20V
    1V
    10V
    20000
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    MPSA42,412 vs MPSA12RLRAG
  • MPSA42
    MPSA42
    Fairchild/ON Semiconductor
    -
    TO-92
    -
    -
    -
    Bulk
    e0
    Active
    -
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    Other Transistors
    BOTTOM
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    3
    O-PBCY-T3
    Not Qualified
    1
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    50MHz
    50MHz
    -
    -
    -
    RoHS Compliant
    -
    Through Hole
    -
    2012
    no
    -
    -
    NPN
    Single
    -
    500mV
    500mA
    300V
    500mV
    6V
    25
    Lead Free
    8 Weeks
    150°C
    -65°C
    625mW
    50MHz
    300V
    40
    500mA
    MPSA42,412 vs MPSA42
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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