Fairchild/ON Semiconductor MMBTH81
- Part Number:
- MMBTH81
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2465617-MMBTH81
- Description:
- TRANSISTOR RF PNP SOT-23
- Datasheet:
- MMBTH81
Fairchild/ON Semiconductor MMBTH81 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBTH81.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time42 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-50mA
- Frequency600MHz
- Base Part NumberMMBTH81
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation225mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product600MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA 10V
- Collector Emitter Breakdown Voltage20V
- Transition Frequency600MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)3V
- hFE Min60
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current50mA
- Collector-Base Capacitance-Max0.85pF
- Height1.11mm
- Length2.92mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTH81 Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMBTH81 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMBTH81. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMBTH81 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMBTH81. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMBTH81 More Descriptions
MMBTH81 Series 20 V CE Breakdown .05 A PNP RF Transistor - SOT-23
50 mA, 20 V PNP RF Bipolar Junction Transistor
Trans RF BJT PNP 20V 0.05A 225mW 3-Pin SOT-23 T/R
PNP-RF 20V 50mA 225mW 600MHz SOT23
RF Bipolar Transistors PNP RF Transistor
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236AA
PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
TRANSISTOR RF, PNP, SOT23; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:20V; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:60; RF Transistor Case:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:50mA; Gain Bandwidth ft Typ:600MHz; Hfe Min:60; Package / Case:SOT-23; Termination Type:SMD; Transistor Case Style:SOT-23
50 mA, 20 V PNP RF Bipolar Junction Transistor
Trans RF BJT PNP 20V 0.05A 225mW 3-Pin SOT-23 T/R
PNP-RF 20V 50mA 225mW 600MHz SOT23
RF Bipolar Transistors PNP RF Transistor
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236AA
PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
TRANSISTOR RF, PNP, SOT23; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:20V; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:60; RF Transistor Case:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:50mA; Gain Bandwidth ft Typ:600MHz; Hfe Min:60; Package / Case:SOT-23; Termination Type:SMD; Transistor Case Style:SOT-23
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