MMBTH81

Fairchild/ON Semiconductor MMBTH81

Part Number:
MMBTH81
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2465617-MMBTH81
Description:
TRANSISTOR RF PNP SOT-23
ECAD Model:
Datasheet:
MMBTH81

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Specifications
Fairchild/ON Semiconductor MMBTH81 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBTH81.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    42 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -50mA
  • Frequency
    600MHz
  • Base Part Number
    MMBTH81
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    225mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    600MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    20V
  • Max Collector Current
    50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 5mA 10V
  • Collector Emitter Breakdown Voltage
    20V
  • Transition Frequency
    600MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Max Breakdown Voltage
    20V
  • Collector Base Voltage (VCBO)
    20V
  • Emitter Base Voltage (VEBO)
    3V
  • hFE Min
    60
  • Max Junction Temperature (Tj)
    150°C
  • Continuous Collector Current
    50mA
  • Collector-Base Capacitance-Max
    0.85pF
  • Height
    1.11mm
  • Length
    2.92mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBTH81 Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMBTH81 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMBTH81. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMBTH81 More Descriptions
MMBTH81 Series 20 V CE Breakdown .05 A PNP RF Transistor - SOT-23
50 mA, 20 V PNP RF Bipolar Junction Transistor
Trans RF BJT PNP 20V 0.05A 225mW 3-Pin SOT-23 T/R
PNP-RF 20V 50mA 225mW 600MHz SOT23
RF Bipolar Transistors PNP RF Transistor
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236AA
PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
TRANSISTOR RF, PNP, SOT23; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:20V; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:60; RF Transistor Case:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:50mA; Gain Bandwidth ft Typ:600MHz; Hfe Min:60; Package / Case:SOT-23; Termination Type:SMD; Transistor Case Style:SOT-23
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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