ON Semiconductor MMBTH10LT1G
- Part Number:
- MMBTH10LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465531-MMBTH10LT1G
- Description:
- TRANS SS VHF MIXER NPN 25V SOT23
- Datasheet:
- MMBTH10LT1G
ON Semiconductor MMBTH10LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTH10LT1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating4mA
- Frequency650MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTH10
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation225mW
- Halogen FreeHalogen Free
- Gain Bandwidth Product650MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA 10V
- Collector Emitter Breakdown Voltage25V
- Transition Frequency650MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)3V
- hFE Min60
- Max Junction Temperature (Tj)150°C
- Collector-Base Capacitance-Max0.7pF
- Height1.11mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The ON Semiconductor MMBTH10LT1G is a high-performance, low-voltage, NPN bipolar transistor designed for use in RF mixer applications. This device is housed in a SOT23 package and is rated for a maximum voltage of 25V. It features a high gain bandwidth of up to 1.5GHz, making it ideal for use in VHF and UHF applications. The MMBTH10LT1G also offers excellent linearity and low noise performance, making it suitable for use in a variety of RF mixer applications. With its low voltage rating and high gain bandwidth, the MMBTH10LT1G is an ideal choice for RF mixer applications.
MMBTH10LT1G More Descriptions
TRANS SS VHF MIXER NPN 25V SOT23 / Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R
MMBTH Series 25 V 100 nA Surface Mount NPN Silicon VHF/UHF Transistor - SOT-23
25V 225mW 60@4mA,10V NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
NPN Bipolar Transistor hFE ≥ 60; fT ≥ 650 MHz
ON Semi MMBTH10LT1G NPN RF Bipolar Transistor, 0.004 A, 25 V, 3-Pin SOT-23 | ON Semiconductor MMBTH10LT1G
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
NPN-RF 25V 50mA 225mW 650MHz SOT23
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
Transistor, NPN, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:650MHz; Power Dissipation
Bipolar Transistor, Npn, 25V; Transistor Polarity:Npn; Collector Emitter Voltage Max:25V; Transition Frequency:650Mhz; Power Dissipation:225Mw; Continuous Collector Current:4Ma; No. Of Pins:3Pins; Dc Current Gain Hfe Min:60Hfe Rohs Compliant: Yes |Onsemi MMBTH10LT1G.
MMBTH Series 25 V 100 nA Surface Mount NPN Silicon VHF/UHF Transistor - SOT-23
25V 225mW 60@4mA,10V NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
NPN Bipolar Transistor hFE ≥ 60; fT ≥ 650 MHz
ON Semi MMBTH10LT1G NPN RF Bipolar Transistor, 0.004 A, 25 V, 3-Pin SOT-23 | ON Semiconductor MMBTH10LT1G
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
NPN-RF 25V 50mA 225mW 650MHz SOT23
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
Transistor, NPN, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:650MHz; Power Dissipation
Bipolar Transistor, Npn, 25V; Transistor Polarity:Npn; Collector Emitter Voltage Max:25V; Transition Frequency:650Mhz; Power Dissipation:225Mw; Continuous Collector Current:4Ma; No. Of Pins:3Pins; Dc Current Gain Hfe Min:60Hfe Rohs Compliant: Yes |Onsemi MMBTH10LT1G.
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