MMBTH10LT1G

ON Semiconductor MMBTH10LT1G

Part Number:
MMBTH10LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2465531-MMBTH10LT1G
Description:
TRANS SS VHF MIXER NPN 25V SOT23
ECAD Model:
Datasheet:
MMBTH10LT1G

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Specifications
ON Semiconductor MMBTH10LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTH10LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    25V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    4mA
  • Frequency
    650MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBTH10
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    225mW
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    650MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    25V
  • Max Collector Current
    100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 4mA 10V
  • Collector Emitter Breakdown Voltage
    25V
  • Transition Frequency
    650MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Max Breakdown Voltage
    25V
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    3V
  • hFE Min
    60
  • Max Junction Temperature (Tj)
    150°C
  • Collector-Base Capacitance-Max
    0.7pF
  • Height
    1.11mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The ON Semiconductor MMBTH10LT1G is a high-performance, low-voltage, NPN bipolar transistor designed for use in RF mixer applications. This device is housed in a SOT23 package and is rated for a maximum voltage of 25V. It features a high gain bandwidth of up to 1.5GHz, making it ideal for use in VHF and UHF applications. The MMBTH10LT1G also offers excellent linearity and low noise performance, making it suitable for use in a variety of RF mixer applications. With its low voltage rating and high gain bandwidth, the MMBTH10LT1G is an ideal choice for RF mixer applications.
MMBTH10LT1G More Descriptions
TRANS SS VHF MIXER NPN 25V SOT23 / Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R
MMBTH Series 25 V 100 nA Surface Mount NPN Silicon VHF/UHF Transistor - SOT-23
25V 225mW 60@4mA,10V NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
NPN Bipolar Transistor hFE ≥ 60; fT ≥ 650 MHz
ON Semi MMBTH10LT1G NPN RF Bipolar Transistor, 0.004 A, 25 V, 3-Pin SOT-23 | ON Semiconductor MMBTH10LT1G
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
NPN-RF 25V 50mA 225mW 650MHz SOT23
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
Transistor, NPN, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:650MHz; Power Dissipation
Bipolar Transistor, Npn, 25V; Transistor Polarity:Npn; Collector Emitter Voltage Max:25V; Transition Frequency:650Mhz; Power Dissipation:225Mw; Continuous Collector Current:4Ma; No. Of Pins:3Pins; Dc Current Gain Hfe Min:60Hfe Rohs Compliant: Yes |Onsemi MMBTH10LT1G.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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