MMBTH10-4LT1G

ON Semiconductor MMBTH10-4LT1G

Part Number:
MMBTH10-4LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2465532-MMBTH10-4LT1G
Description:
TRANS VHF/UHF NPN 25V SOT-23
ECAD Model:
Datasheet:
MMBTH10-4LT1G

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Specifications
ON Semiconductor MMBTH10-4LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTH10-4LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    25V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    4mA
  • Frequency
    800MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBTH10
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    800MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    25V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 4mA 10V
  • Collector Emitter Breakdown Voltage
    25V
  • Transition Frequency
    800MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Max Breakdown Voltage
    25V
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    3V
  • hFE Min
    120
  • Collector Current-Max (IC)
    0.025A
  • Collector-Base Capacitance-Max
    0.7pF
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description:
The ON Semiconductor MMBTH10-4LT1G is a NPN Bipolar Transistor designed for use in VHF/UHF applications. It is housed in a SOT-23 package and has a maximum collector-emitter voltage of 25V.

Features:
• NPN Bipolar Transistor
• Designed for VHF/UHF applications
• Maximum Collector-Emitter Voltage: 25V
• Package: SOT-23

Applications:
• RF Amplifiers
• RF Mixers
• RF Oscillators
• RF Switches
• RF Detectors
MMBTH10-4LT1G More Descriptions
NPN Bipolar Transistor hFE 120 to 240; fT ≥ 800 MHz
NPN 25 V 225 mW Surface Mount Silicon Transistor - SOT-23
Trans RF BJT NPN 25V 225mW Automotive 3-Pin SOT-23 T/R
RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236)
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
TRANSISTOR, NPN, 25V, 4MA, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 800MHz; Power Dissipation Pd: 225mW; DC Collector Current: -; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
BIPOLAR TRANSISTOR, NPN, 25V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:25V; Transition Frequency:800MHz; Power Dissipation:225mW; Continuous Collector Current:1mA; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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