ON Semiconductor MMBTH10-4LT1G
- Part Number:
- MMBTH10-4LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465532-MMBTH10-4LT1G
- Description:
- TRANS VHF/UHF NPN 25V SOT-23
- Datasheet:
- MMBTH10-4LT1G
ON Semiconductor MMBTH10-4LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTH10-4LT1G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating4mA
- Frequency800MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTH10
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Halogen FreeHalogen Free
- Gain Bandwidth Product800MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 4mA 10V
- Collector Emitter Breakdown Voltage25V
- Transition Frequency800MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)3V
- hFE Min120
- Collector Current-Max (IC)0.025A
- Collector-Base Capacitance-Max0.7pF
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description:
The ON Semiconductor MMBTH10-4LT1G is a NPN Bipolar Transistor designed for use in VHF/UHF applications. It is housed in a SOT-23 package and has a maximum collector-emitter voltage of 25V.
Features:
• NPN Bipolar Transistor
• Designed for VHF/UHF applications
• Maximum Collector-Emitter Voltage: 25V
• Package: SOT-23
Applications:
• RF Amplifiers
• RF Mixers
• RF Oscillators
• RF Switches
• RF Detectors
The ON Semiconductor MMBTH10-4LT1G is a NPN Bipolar Transistor designed for use in VHF/UHF applications. It is housed in a SOT-23 package and has a maximum collector-emitter voltage of 25V.
Features:
• NPN Bipolar Transistor
• Designed for VHF/UHF applications
• Maximum Collector-Emitter Voltage: 25V
• Package: SOT-23
Applications:
• RF Amplifiers
• RF Mixers
• RF Oscillators
• RF Switches
• RF Detectors
MMBTH10-4LT1G More Descriptions
NPN Bipolar Transistor hFE 120 to 240; fT ≥ 800 MHz
NPN 25 V 225 mW Surface Mount Silicon Transistor - SOT-23
Trans RF BJT NPN 25V 225mW Automotive 3-Pin SOT-23 T/R
RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236)
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
TRANSISTOR, NPN, 25V, 4MA, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 800MHz; Power Dissipation Pd: 225mW; DC Collector Current: -; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
BIPOLAR TRANSISTOR, NPN, 25V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:25V; Transition Frequency:800MHz; Power Dissipation:225mW; Continuous Collector Current:1mA; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
NPN 25 V 225 mW Surface Mount Silicon Transistor - SOT-23
Trans RF BJT NPN 25V 225mW Automotive 3-Pin SOT-23 T/R
RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236)
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
TRANSISTOR, NPN, 25V, 4MA, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 800MHz; Power Dissipation Pd: 225mW; DC Collector Current: -; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
BIPOLAR TRANSISTOR, NPN, 25V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:25V; Transition Frequency:800MHz; Power Dissipation:225mW; Continuous Collector Current:1mA; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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