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MMBTA56-TP

Micro Commercial Co MMBTA56-TP

Part Number:
MMBTA56-TP
Manufacturer:
Micro Commercial Co
Ventron No:
2463151-MMBTA56-TP
Description:
TRANS PNP 80V 0.5A SOT23
ECAD Model:
Datasheet:
MMBTA56-TP

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Specifications
Micro Commercial Co MMBTA56-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co MMBTA56-TP.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    MMBTA5*
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    225mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA 1V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Current - Collector (Ic) (Max)
    500mA
  • Transition Frequency
    50MHz
  • Frequency - Transition
    50MHz
  • Power Dissipation-Max (Abs)
    0.225W
  • RoHS Status
    ROHS3 Compliant
Description
MMBTA56-TP Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 50MHz.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.

MMBTA56-TP Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz


MMBTA56-TP Applications
There are a lot of Micro Commercial Co
MMBTA56-TP applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBTA56-TP More Descriptions
80V 225mW 100@100mA,1V 500mA PNP SOT-23(TO-236) Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 80V 0.5A 225mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
MMBTA56 Series 80 V 500 mA 225 mW SMT PNP General Purpose Amplifier - SOT-23-3
500mA 225mW PNP General-Purpose Amplifier, SOT-23, 7IN. REEL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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