ON Semiconductor MMBTA14LT1
- Part Number:
- MMBTA14LT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466842-MMBTA14LT1
- Description:
- TRANS NPN DARL 30V 0.3A SOT23
- Datasheet:
- MMBTA13LT1,MMBTA14LT1
ON Semiconductor MMBTA14LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA14LT1.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- Power - Max225mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 10mA 5V
- JEDEC-95 CodeTO-236AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)300mA
- Transition Frequency125MHz
- Frequency - Transition125MHz
- RoHS StatusNon-RoHS Compliant
MMBTA14LT1 Overview
DC current gain in this device equals 10000 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.As a result, the part has a transition frequency of 125MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MMBTA14LT1 Features
the DC current gain for this device is 10000 @ 10mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz
MMBTA14LT1 Applications
There are a lot of Rochester Electronics, LLC
MMBTA14LT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 10000 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.As a result, the part has a transition frequency of 125MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MMBTA14LT1 Features
the DC current gain for this device is 10000 @ 10mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz
MMBTA14LT1 Applications
There are a lot of Rochester Electronics, LLC
MMBTA14LT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA14LT1 More Descriptions
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Cut Tape (CT) Surface Mount NPN - Darlington Single Bipolar (BJT) Transistor 10000 @ 10mA 5V 300mA 225mW 125MHz
NPN Bipolar Darlington Transistor
Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R - Tape and Reel
Cut Tape (CT) Surface Mount NPN - Darlington Single Bipolar (BJT) Transistor 10000 @ 10mA 5V 300mA 225mW 125MHz
NPN Bipolar Darlington Transistor
Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R - Tape and Reel
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