MMBTA14LT1

ON Semiconductor MMBTA14LT1

Part Number:
MMBTA14LT1
Manufacturer:
ON Semiconductor
Ventron No:
2466842-MMBTA14LT1
Description:
TRANS NPN DARL 30V 0.3A SOT23
ECAD Model:
Datasheet:
MMBTA13LT1,MMBTA14LT1

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Specifications
ON Semiconductor MMBTA14LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA14LT1.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Number of Elements
    1
  • Power - Max
    225mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN - Darlington
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10000 @ 10mA 5V
  • JEDEC-95 Code
    TO-236AB
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 100μA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Current - Collector (Ic) (Max)
    300mA
  • Transition Frequency
    125MHz
  • Frequency - Transition
    125MHz
  • RoHS Status
    Non-RoHS Compliant
Description
MMBTA14LT1 Overview
DC current gain in this device equals 10000 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.As a result, the part has a transition frequency of 125MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

MMBTA14LT1 Features
the DC current gain for this device is 10000 @ 10mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz


MMBTA14LT1 Applications
There are a lot of Rochester Electronics, LLC
MMBTA14LT1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBTA14LT1 More Descriptions
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Cut Tape (CT) Surface Mount NPN - Darlington Single Bipolar (BJT) Transistor 10000 @ 10mA 5V 300mA 225mW 125MHz
NPN Bipolar Darlington Transistor
Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R - Tape and Reel
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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