MMBT918LT1G

ON Semiconductor MMBT918LT1G

Part Number:
MMBT918LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2465657-MMBT918LT1G
Description:
TRANS SS VHF NPN 15V SOT23
ECAD Model:
Datasheet:
MMBT918LT1G

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Specifications
ON Semiconductor MMBT918LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT918LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    15V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    50mA
  • Frequency
    600MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBT918
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Gain Bandwidth Product
    600MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    15V
  • Max Collector Current
    50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 3mA 1V
  • Collector Emitter Breakdown Voltage
    15V
  • Gain
    11dB
  • Transition Frequency
    600MHz
  • Collector Emitter Saturation Voltage
    400mV
  • Max Breakdown Voltage
    15V
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    3V
  • hFE Min
    20
  • Noise Figure (dB Typ @ f)
    6dB @ 60MHz
  • Height
    1.01mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBT918LT1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet MMBT918LT1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMBT918LT1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMBT918LT1G More Descriptions
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ON Semi MMBT918LT1G NPN RF Bipolar Transistor, 0.05 A, 15 V, 3-Pin SOT-23 | ON Semiconductor MMBT918LT1G
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
TRANSISTOR, BIPOL, NPN, 15V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: 600MHz; Power Dissipation Pd: 225mW; DC Collector Current: 50mA; DC Current Gain hFE: 20hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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