MMBT6428

Fairchild/ON Semiconductor MMBT6428

Part Number:
MMBT6428
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2462946-MMBT6428
Description:
TRANS NPN 50V 0.5A SOT-23
ECAD Model:
Datasheet:
MMBT6428

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Specifications
Fairchild/ON Semiconductor MMBT6428 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT6428.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 days ago)
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    350mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    500mA
  • Frequency
    700MHz
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MMBT6428
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    350mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    700MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    250 @ 100μA 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    600mV
  • Max Breakdown Voltage
    50V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    250
  • Height
    930μm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
MMBT6428 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MMBT6428 Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz


MMBT6428 Applications
There are a lot of ON Semiconductor
MMBT6428 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT6428 More Descriptions
MMBT6428 Series 50 V CE Breakdown 0.5 A NPN General Purpose Amplifier - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 0.5A 3-Pin SOT-23 T/R
TRANSISTOR NPN 0.5A 50V SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:700MHz; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:250; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:700MHz; Hfe Min:250; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD; Transistor Type:General Purpose
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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