Fairchild/ON Semiconductor MMBT6428
- Part Number:
- MMBT6428
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462946-MMBT6428
- Description:
- TRANS NPN 50V 0.5A SOT-23
- Datasheet:
- MMBT6428
Fairchild/ON Semiconductor MMBT6428 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT6428.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency700MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMMBT6428
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product700MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100μA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min250
- Height930μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MMBT6428 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6428 Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBT6428 Applications
There are a lot of ON Semiconductor
MMBT6428 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6428 Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBT6428 Applications
There are a lot of ON Semiconductor
MMBT6428 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT6428 More Descriptions
MMBT6428 Series 50 V CE Breakdown 0.5 A NPN General Purpose Amplifier - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 0.5A 3-Pin SOT-23 T/R
TRANSISTOR NPN 0.5A 50V SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:700MHz; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:250; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:700MHz; Hfe Min:250; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD; Transistor Type:General Purpose
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 50V 0.5A 3-Pin SOT-23 T/R
TRANSISTOR NPN 0.5A 50V SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:700MHz; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:250; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:700MHz; Hfe Min:250; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD; Transistor Type:General Purpose
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 December 2023
LT4320 Ideal Diode Bridge Controllers Subverts the Traditional Bridge Rectifier
Ⅰ. What is LT4320?Ⅱ. How does LT4320 overcome the shortcomings of full-wave rectification?Ⅲ. Which manufacturer makes the LT4320?Ⅳ. Pin configuration of LT4320Ⅴ. Three-phase ideal rectification based on LT4320Ⅵ.... -
18 December 2023
Can CR2032 Button Battery Be Recharged?
Ⅰ. What is CR2032 battery?Ⅱ. Development of CR2032 lithium button batteryⅢ. Five major brands of CR2032 button batteriesⅣ. Applications and application circuit of CR2032 button batteryⅤ. Is the... -
19 December 2023
DS1990A: An Authentication and Data Storage Solution that Balances Efficiency and Security
Ⅰ. What is iButton?Ⅱ. Overview of DS1990A iButtonⅢ. Functional block diagram of DS1990AⅣ. Where is DS1990A iButton used?Ⅴ. How does DS1990A communicate with the host device?Ⅵ. Specifications of... -
19 December 2023
PT2399: The Next-Gen Digital Delay and Echo Audio Processor IC
Ⅰ. What is PT2399?Ⅱ. Structure and working principle of PT2399Ⅲ. Total harmonic distortion and noise of PT2399Ⅳ. Which one is better, PT2399 or PT2399?Ⅴ. Who is the manufacturer...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.