ON Semiconductor MMBT5087LT3G

MMBT5087LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100μA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -50mA.A transition frequency of 40MHz is present in the part.Collector current can be as low as 50mA volts at its maximum.

MMBT5087LT3G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz


MMBT5087LT3G Applications
There are a lot of ON Semiconductor
MMBT5087LT3G applications of single BJT transistors.


Inverter
Interface
Driver
Muting