Fairchild/ON Semiconductor MMBT3906T

Name: MMBT3906T
Brand: Fairchild/ON Semiconductor
SKU: 2464640-MMBT3906T
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBT3906T

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2464640-MMBT3906T

Description:: TRANS PNP 40V 0.2A SOT-523F

ECAD Model:

Datasheet:: MMBT3906T

Part Pictures

Specifications

Fairchild/ON Semiconductor MMBT3906T technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT3906T.

Lifecycle Status
LIFETIME (Last Updated: 17 hours ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Number of Pins
3
Supplier Device Package
SOT-523F
Weight
30mg
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Frequency
250MHz
Base Part Number
MMBT3906
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
250mW
Power - Max
250mW
Gain Bandwidth Product
250MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Max Frequency
250MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
40V
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Height
780μm
Length
1.7mm
Width
980μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMBT3906T Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Breakdown input voltage is 40V volts.Product comes in SOT-523F supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 200mA volts.

MMBT3906T Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the supplier device package of SOT-523F

MMBT3906T Applications
There are a lot of ON Semiconductor
MMBT3906T applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MMBT3906T More Descriptions

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