Microchip Technology MCP14E3-E/SN
- Part Number:
- MCP14E3-E/SN
- Manufacturer:
- Microchip Technology
- Ventron No:
- 3254885-MCP14E3-E/SN
- Description:
- IC MOSFET DVR 4.0A DUAL 8SOIC
- Datasheet:
- MCP14E3-E/SN
Microchip Technology MCP14E3-E/SN technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology MCP14E3-E/SN.
- Factory Lead Time9 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryMOSFET Drivers
- Max Power Dissipation665mW
- TechnologyCMOS
- Voltage - Supply4.5V~18V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage12V
- Reflow Temperature-Max (s)40
- Base Part NumberMCP14E3
- Pin Count8
- Number of Outputs2
- Output Voltage17.975V
- Max Output Current4A
- Nominal Supply Current750μA
- Power Dissipation665mW
- Output Current4A
- Max Supply Current2mA
- Propagation Delay60 ns
- Input TypeInverting
- Turn On Delay Time60 ns
- Rise Time30ns
- Fall Time (Typ)30 ns
- Rise / Fall Time (Typ)15ns 18ns
- Interface IC TypePUSH-PULL BASED MOSFET DRIVER
- Channel TypeIndependent
- Input Bias Current10μA
- Turn On Time0.07 μs
- Output Peak Current Limit-Nom4A
- Driven ConfigurationLow-Side
- Gate TypeIGBT, N-Channel, P-Channel MOSFET
- Current - Peak Output (Source, Sink)4A 4A
- High Side DriverNO
- Logic Voltage - VIL, VIH0.8V 2.4V
- Turn Off Time0.07 μs
- Height1.4986mm
- Length4.8768mm
- Width3.9116mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MCP14E3-E/SN Overview
The device in question has 8 pins and is packaged in a tube for easy handling and storage. It utilizes CMOS technology, which is known for its low power consumption and high noise immunity. The nominal supply current required for its operation is 750μA, ensuring efficient power usage. The propagation delay, or the time it takes for a signal to travel through the device, is 60 ns, indicating fast signal processing capabilities. The turn-on time, or the time it takes for the device to become fully operational, is 0.07 μs, ensuring quick response times. The device can handle a peak output current of 4A both for sourcing and sinking, making it suitable for high-power applications. It does not feature a high-side driver, meaning it cannot drive loads connected to the positive supply voltage. The device has a height of 1.4986mm, making it compact and suitable for space-constrained applications. However, it does not possess radiation hardening capabilities, meaning it may not be suitable for use in environments with high levels of radiation.
MCP14E3-E/SN Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
8 pins
Maximum power dissipation of 665mW
MCP14E3-E/SN Applications
There are a lot of Microchip Technology MCP14E3-E/SN gate drivers applications.
High-speed communications
Welding
Industrial Motor Inverter - Power Tools, Robotics
Multicolor LED/laser displays
UPS systems
Motor controllers
Motor Control
Isolated Supplies for Motor Control
Industrial Power Supplies
Commercial air-conditioning (CAC)
The device in question has 8 pins and is packaged in a tube for easy handling and storage. It utilizes CMOS technology, which is known for its low power consumption and high noise immunity. The nominal supply current required for its operation is 750μA, ensuring efficient power usage. The propagation delay, or the time it takes for a signal to travel through the device, is 60 ns, indicating fast signal processing capabilities. The turn-on time, or the time it takes for the device to become fully operational, is 0.07 μs, ensuring quick response times. The device can handle a peak output current of 4A both for sourcing and sinking, making it suitable for high-power applications. It does not feature a high-side driver, meaning it cannot drive loads connected to the positive supply voltage. The device has a height of 1.4986mm, making it compact and suitable for space-constrained applications. However, it does not possess radiation hardening capabilities, meaning it may not be suitable for use in environments with high levels of radiation.
MCP14E3-E/SN Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
8 pins
Maximum power dissipation of 665mW
MCP14E3-E/SN Applications
There are a lot of Microchip Technology MCP14E3-E/SN gate drivers applications.
High-speed communications
Welding
Industrial Motor Inverter - Power Tools, Robotics
Multicolor LED/laser displays
UPS systems
Motor controllers
Motor Control
Isolated Supplies for Motor Control
Industrial Power Supplies
Commercial air-conditioning (CAC)
MCP14E3-E/SN More Descriptions
Driver 4A 2-OUT Low Side Inv Automotive 8-Pin SOIC N Tube
Tube MCP14E3 Low-Side 2007 gate driver 30ns -40C~150C TJ 4A 4A 665mW
Power MOSFET Driver Low Side, 4A, 18V, SOIC-8, RoHSMicrochip SCT
DUAL INVERTING 4.5 AMP MOSFET DRIVER WITH ENABLE PIN
MCP14E3-E/SN, Dual MOSFET Power Driver 4A,4.5 to 18V, Inverting,8-Pin SOIC | Microchip Technology Inc. MCP14E3-E/SN
Low-Side Gate Driver IC Inverting 8-SOIC
Buffer/Inverter Based MOSFET Driver, 4A, PDSO8
DRIVER, MOSFET, DUAL, 4A, 22V, 8SOIC; Driver Configuration: Low Side; Peak Output Current: 4A; Supply Voltage Min: 4.5V; Supply Voltage Max: 18V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 46ns; Output Delay: 50ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: AEC-Q100; RoHS Phthalates Compliant: Yes; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Device Type: MOSFET; Fall Time tf: 30ns; Module Configuration: Low Side; No. of Channels: 2Channels; No. of Drivers: 2Drivers; No. of Outputs: 2Outputs; Operating Temperature Range: -40°C to 125°C; Output Current Max: 4A; Output Resistance: 2.5ohm; Output Voltage Max: 17.975V; Output Voltage Min: 0.025V; Power Dissipation Pd: 665mW; Rise Time: 30ns; Supply Voltage Range: 4.5V to 18V; Termination Type: Surface Mount Device
Drivers - MOSFET 4.5A Dual MOSFET Driver
Tube MCP14E3 Low-Side 2007 gate driver 30ns -40C~150C TJ 4A 4A 665mW
Power MOSFET Driver Low Side, 4A, 18V, SOIC-8, RoHSMicrochip SCT
DUAL INVERTING 4.5 AMP MOSFET DRIVER WITH ENABLE PIN
MCP14E3-E/SN, Dual MOSFET Power Driver 4A,4.5 to 18V, Inverting,8-Pin SOIC | Microchip Technology Inc. MCP14E3-E/SN
Low-Side Gate Driver IC Inverting 8-SOIC
Buffer/Inverter Based MOSFET Driver, 4A, PDSO8
DRIVER, MOSFET, DUAL, 4A, 22V, 8SOIC; Driver Configuration: Low Side; Peak Output Current: 4A; Supply Voltage Min: 4.5V; Supply Voltage Max: 18V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 46ns; Output Delay: 50ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: AEC-Q100; RoHS Phthalates Compliant: Yes; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Device Type: MOSFET; Fall Time tf: 30ns; Module Configuration: Low Side; No. of Channels: 2Channels; No. of Drivers: 2Drivers; No. of Outputs: 2Outputs; Operating Temperature Range: -40°C to 125°C; Output Current Max: 4A; Output Resistance: 2.5ohm; Output Voltage Max: 17.975V; Output Voltage Min: 0.025V; Power Dissipation Pd: 665mW; Rise Time: 30ns; Supply Voltage Range: 4.5V to 18V; Termination Type: Surface Mount Device
Drivers - MOSFET 4.5A Dual MOSFET Driver
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