MBRD660CTT4G

ON Semiconductor MBRD660CTT4G

Part Number:
MBRD660CTT4G
Manufacturer:
ON Semiconductor
Ventron No:
2413467-MBRD660CTT4G
Description:
DIODE ARRAY SCHOTTKY 60V 3A DPAK
ECAD Model:
Datasheet:
MBRD660CTT4G

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Specifications
ON Semiconductor MBRD660CTT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBRD660CTT4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 13 hours ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Packaging
    Cut Tape (CT)
  • Series
    SWITCHMODE™
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREE WHEELING DIODE
  • HTS Code
    8541.10.00.80
  • Voltage - Rated DC
    60V
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Current Rating
    6A
  • Base Part Number
    MBRD660CT
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    100μA @ 60V
  • Voltage - Forward (Vf) (Max) @ If
    700mV @ 3A
  • Forward Current
    6A
  • Max Reverse Leakage Current
    100μA
  • Operating Temperature - Junction
    -65°C~175°C
  • Max Surge Current
    75A
  • Output Current-Max
    3A
  • Application
    FAST RECOVERY POWER
  • Halogen Free
    Halogen Free
  • Forward Voltage
    900mV
  • Max Reverse Voltage (DC)
    60V
  • Average Rectified Current
    3A
  • Number of Phases
    1
  • Peak Reverse Current
    100μA
  • Max Repetitive Reverse Voltage (Vrrm)
    60V
  • Peak Non-Repetitive Surge Current
    75A
  • Diode Configuration
    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)
    75A
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MBRD660CTT4G Overview
When the forward voltage is set to 900mV, this device will operate.Array is capable of supporting a maximum output voltage of 3A.Monarrayoring the surge current and preventing array from exceeding 75A should be the rule.When the forward voltage is set to 6A, this device will operate.A current of 6A can be drawn from the part.Devices like this one are powered with a reverse voltage peak of 100μA.Its maximal reverse leakage current is 100μA, which is the current from that semiconductor device when the device is reverse biased.

MBRD660CTT4G Features
900mV forward voltage
a maximum output voltage of 3A
a peak voltage of 100μA
a reverse voltage peak of 100μA


MBRD660CTT4G Applications
There are a lot of ON Semiconductor
MBRD660CTT4G applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBRD660CTT4G More Descriptions
Rectifier Diode Schottky 60V 6A 3-Pin(2 Tab) DPAK T/R / DIODE ARRAY SCHOTTKY 60V 3A DPAK
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA
MBRD660CT Series 60 V 6 A Surface Mount Schottky Rectifier Diode - TO-252-3
Schottky Power Rectifier, Switch-mode, 6 A, 60 V
DIODE, SCHOTTKY, 6A, 60V, TO-252-3; Repetitive Reverse Voltage Vrrm Max: 60V; Forward Current If(AV): 6A; Diode Configuration: Dual Common Cathode; Diode Case Style: TO-252; No. of Pins: 3Pins; Forward Voltage VF Max: 900mV; F
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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