MBR50060CTR

GeneSiC Semiconductor MBR50060CTR

Part Number:
MBR50060CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2420180-MBR50060CTR
Description:
DIODE MODULE 600V 500A 2TOWER
ECAD Model:
Datasheet:
MBR50060CTR

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Specifications
GeneSiC Semiconductor MBR50060CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR50060CTR.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount, Through Hole
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    Solder
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • Gender
    Male
  • HTS Code
    8541.10.00.80
  • Pitch
    4.2mm
  • Terminal Position
    UPPER
  • Orientation
    Right Angle
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Contacts
    6
  • Number of Elements
    2
  • Max Voltage Rating (AC)
    600V
  • Element Configuration
    Common Anode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky, Reverse Polarity
  • Current - Reverse Leakage @ Vr
    1mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    800mV @ 250A
  • Forward Current
    500A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    3.5kA
  • Output Current-Max
    250A
  • Application
    POWER
  • Current - Average Rectified (Io)
    500A DC
  • Max Reverse Voltage (DC)
    600V
  • Average Rectified Current
    500A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    60V
  • Diode Configuration
    1 Pair Common Anode
  • RoHS Status
    RoHS Compliant
Description
MBR50060CTR Overview
A maximum output voltage of 250A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 3.5kA.The device operates when the forward voltage is set to 500A.Typical devices like this one are powered by reverse voltage peaks of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.

MBR50060CTR Features
a maximum output voltage of 250A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR50060CTR Applications
There are a lot of GeneSiC Semiconductor
MBR50060CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR50060CTR More Descriptions
60 V 500 A Twin Tower Silicon Schottky Rectifier
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 60P42RV
Schottky Rectifier, Common And, 60V, 500A, 2-Tower; Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(Av):500A; Forward Voltage Vf Max:800Mv; Diode Module Configuration:1 Pair Common Anode; Product Range:- Rohs Compliant: Yes |Genesic Semiconductor MBR50060CTR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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