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MBR50045CT

GeneSiC Semiconductor MBR50045CT

Part Number:
MBR50045CT
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2420177-MBR50045CT
Description:
DIODE MODULE 45V 500A 2TOWER
ECAD Model:
Datasheet:
MBR50045CT

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Specifications
GeneSiC Semiconductor MBR50045CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR50045CT.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    1mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    750mV @ 250A
  • Forward Current
    500A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    3.5kA
  • Output Current-Max
    250A
  • Application
    POWER
  • Current - Average Rectified (Io)
    500A DC
  • Max Reverse Voltage (DC)
    45V
  • Average Rectified Current
    500A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    45V
  • Diode Configuration
    1 Pair Common Cathode
  • RoHS Status
    RoHS Compliant
Description
MBR50045CT Overview
A maximum output voltage of 250A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 3.5kA.The device operates when the forward voltage is set to 500A.Typical devices like this one are powered by reverse voltage peaks of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.

MBR50045CT Features
a maximum output voltage of 250A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR50045CT Applications
There are a lot of GeneSiC Semiconductor
MBR50045CT applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR50045CT More Descriptions
45 V 500 A Twin Tower Silicon Schottky Rectifier
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 45P/32R
DIODE MODULE 45V 500A 2TOWER
DIODE MODULE 40V 300A 3TOWER
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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