ON Semiconductor MBR41H100CTG
- Part Number:
- MBR41H100CTG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2822239-MBR41H100CTG
- Description:
- DIODE ARRAY SCHOTTKY 100V TO220
- Datasheet:
- MBR41H100CTG
ON Semiconductor MBR41H100CTG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBR41H100CTG.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time11 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Diode Element MaterialSILICON
- PackagingTube
- SeriesSWITCHMODE™
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Additional FeatureLOW POWER LOSS
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Voltage - Rated DC100V
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)260
- Current Rating20A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr10μA @ 100V
- Voltage - Forward (Vf) (Max) @ If800mV @ 20A
- Forward Current20A
- Max Reverse Leakage Current10μA
- Operating Temperature - Junction175°C Max
- Max Surge Current350A
- ApplicationEFFICIENCY
- Forward Voltage900mV
- Max Reverse Voltage (DC)100V
- Average Rectified Current20A
- Number of Phases1
- Peak Reverse Current10μA
- Max Repetitive Reverse Voltage (Vrrm)100V
- JEDEC-95 CodeTO-220AB
- Peak Non-Repetitive Surge Current350A
- Diode Configuration1 Pair Common Cathode
- Max Forward Surge Current (Ifsm)350A
- Height15.75mm
- Length10.28mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MBR41H100CTG Overview
The device operates when the forward voltage is set to 900mV.Array should be a rule to monArrayor the surge current and not allow Array to exceed 350A.The device operates when the forward voltage is set to 20A.There can be a current drawn from this part of 20A.Typical devices like this one are powered by reverse voltage peaks of 10μA.The maximum reverse leakage current from this semiconductor is 10μA, which corresponds to the reverse leakage current from that device when reverse biased.
MBR41H100CTG Features
900mV forward voltage
a peak voltage of 10μA
a reverse voltage peak of 10μA
MBR41H100CTG Applications
There are a lot of ON Semiconductor
MBR41H100CTG applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
The device operates when the forward voltage is set to 900mV.Array should be a rule to monArrayor the surge current and not allow Array to exceed 350A.The device operates when the forward voltage is set to 20A.There can be a current drawn from this part of 20A.Typical devices like this one are powered by reverse voltage peaks of 10μA.The maximum reverse leakage current from this semiconductor is 10μA, which corresponds to the reverse leakage current from that device when reverse biased.
MBR41H100CTG Features
900mV forward voltage
a peak voltage of 10μA
a reverse voltage peak of 10μA
MBR41H100CTG Applications
There are a lot of ON Semiconductor
MBR41H100CTG applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR41H100CTG More Descriptions
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-220AB
Diode Schottky 100V 20A SWITCHMODE TO220 | ON Semiconductor MBR41H100CTG
Diode Schottky 100V 20A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Enhanced Schottky rectifiers with lower Vf higher surge and lower Ir parameters
Schottky Barrier Rectifier, H-Series, 100 V, 40 A
Schottky Rectifier, Common Cathode, 20A To-220; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(Av):40A; Diode Configuration:Dual Common Cathode; Diode Case Style:To-220; No. Of Pins:3Pins; Forward Voltage Vf Max:900Mv Rohs Compliant: Yes |Onsemi MBR41H100CTG
Diode Schottky 100V 20A SWITCHMODE TO220 | ON Semiconductor MBR41H100CTG
Diode Schottky 100V 20A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Enhanced Schottky rectifiers with lower Vf higher surge and lower Ir parameters
Schottky Barrier Rectifier, H-Series, 100 V, 40 A
Schottky Rectifier, Common Cathode, 20A To-220; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(Av):40A; Diode Configuration:Dual Common Cathode; Diode Case Style:To-220; No. Of Pins:3Pins; Forward Voltage Vf Max:900Mv Rohs Compliant: Yes |Onsemi MBR41H100CTG
The three parts on the right have similar specifications to MBR41H100CTG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsDiode Element MaterialPackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentApplicationForward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)JEDEC-95 CodePeak Non-Repetitive Surge CurrentDiode ConfigurationMax Forward Surge Current (Ifsm)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):MountTerminal FormJESD-30 CodeOperating Temperature (Max)Non-rep Pk Forward Current-MaxReverse Current-MaxView Compare
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MBR41H100CTGACTIVE (Last Updated: 3 days ago)11 WeeksThrough HoleTO-220-3NO3SILICONTubeSWITCHMODE™2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)175°C-65°CLOW POWER LOSS8541.10.00.80Rectifier Diodes100VSINGLE26020A4032Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky10μA @ 100V800mV @ 20A20A10μA175°C Max350AEFFICIENCY900mV100V20A110μA100VTO-220AB350A1 Pair Common Cathode350A15.75mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead Free--------------------
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--------------------------------------------------------600mV @ 20A45VTO-220ABFast Recovery = 200mA (Io)-TubeTO-220-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode1mA @ 45V20A------
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PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis MountTwin Tower--SILICONBulk---yesActive1 (Unlimited)2EAR99----8541.10.00.80--UPPER----2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 200V920mV @ 200A---55°C~150°C-POWER-200V200A1----1 Pair Common Cathode------RoHS Compliant--------------Chassis MountUNSPECIFIEDR-PUFM-X2150°C3000A3000μA
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PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis MountTwin Tower--SILICONBulk---yesActive1 (Unlimited)2EAR99----8541.10.00.80--UPPER----2Common AnodeFast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 200V920mV @ 200A---55°C~150°C-POWER-200V200A1----1 Pair Common Anode------RoHS Compliant--------------Chassis MountUNSPECIFIEDR-PUFM-X2150°C3000A3000μA
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