MBR40080CT

GeneSiC Semiconductor MBR40080CT

Part Number:
MBR40080CT
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2420086-MBR40080CT
Description:
DIODE MODULE 80V 400A 2TOWER
ECAD Model:
Datasheet:
MBR40080CT

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Specifications
GeneSiC Semiconductor MBR40080CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR40080CT.
  • Factory Lead Time
    4 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    5mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    840mV @ 200A
  • Forward Current
    400A
  • Max Reverse Leakage Current
    1μA
  • Max Surge Current
    3kA
  • Output Current-Max
    200A
  • Application
    POWER
  • Current - Average Rectified (Io)
    400A DC
  • Max Reverse Voltage (DC)
    80V
  • Average Rectified Current
    400A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    80V
  • Diode Configuration
    1 Pair Common Cathode
  • RoHS Status
    RoHS Compliant
Description
MBR40080CT Overview
200A is its maximum output voltage.In order to prevent the surge current from exceeding 3kA, it should be monitored.There will be no operation of this device when the forward voltage is set to 400A.In devices such as this one, reverse voltage peak is set at 1A.As a reverse biased semiconductor device, its maximal reverse leakage current is 1μA.

MBR40080CT Features
a maximum output voltage of 200A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR40080CT Applications
There are a lot of GeneSiC Semiconductor
MBR40080CT applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR40080CT More Descriptions
80V 400A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 400A 80P56RV
Schottky Rectifier, Comn Cthd, 80V, 400A, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):400A; Forward Voltage Vf Max:840Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:80V
Product Comparison
The three parts on the right have similar specifications to MBR40080CT.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Max Operating Temperature
    Min Operating Temperature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Max Surge Current
    Output Current-Max
    Application
    Current - Average Rectified (Io)
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    RoHS Status
    ECCN Code
    Additional Feature
    HTS Code
    Subcategory
    Reach Compliance Code
    Base Part Number
    Pin Count
    Qualification Status
    Element Configuration
    Operating Temperature - Junction
    Forward Voltage
    Max Forward Surge Current (Ifsm)
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Diode Configuration:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io) (per Diode):
    Lifecycle Status
    Pbfree Code
    Operating Temperature (Max)
    Non-rep Pk Forward Current-Max
    Reverse Current-Max
    View Compare
  • MBR40080CT
    MBR40080CT
    4 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    2012
    Active
    1 (Unlimited)
    2
    175°C
    -40°C
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    R-PUFM-X2
    2
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    5mA @ 20V
    840mV @ 200A
    400A
    1μA
    3kA
    200A
    POWER
    400A DC
    80V
    400A
    1
    1A
    80V
    1 Pair Common Cathode
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR4045CT-1
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    SILICON
    Tube
    2009
    Obsolete
    1 (Unlimited)
    3
    150°C
    -65°C
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSIP-T3
    2
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1mA @ 45V
    600mV @ 20A
    40A
    -
    -
    -
    GENERAL PURPOSE
    -
    45V
    20A
    1
    1mA
    45V
    1 Pair Common Cathode
    Non-RoHS Compliant
    EAR99
    FREE WHEELING DIODE, HIGH RELIABILITY
    8541.10.00.80
    Rectifier Diodes
    unknown
    MBR4045CT
    3
    Not Qualified
    Common Cathode
    -65°C~150°C
    780mV
    900A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR4045PT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    700mV @ 20A
    45V
    SOT-93
    Fast Recovery = 200mA (Io)
    SWITCHMODE™
    Tube
    TO-218-3
    -65°C ~ 150°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    1mA @ 45V
    20A
    -
    -
    -
    -
    -
  • MBR400200CT
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    -
    Active
    1 (Unlimited)
    2
    -
    -
    UPPER
    UNSPECIFIED
    -
    -
    R-PUFM-X2
    2
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    3mA @ 200V
    920mV @ 200A
    -
    -
    -
    -
    POWER
    -
    200V
    200A
    1
    -
    -
    1 Pair Common Cathode
    RoHS Compliant
    EAR99
    -
    8541.10.00.80
    -
    -
    -
    -
    -
    Common Cathode
    -55°C~150°C
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PRODUCTION (Last Updated: 5 months ago)
    yes
    150°C
    3000A
    3000μA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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