GeneSiC Semiconductor MBR40030CTR
- Part Number:
- MBR40030CTR
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2418094-MBR40030CTR
- Description:
- DIODE MODULE 30V 400A 2TOWER
- ECAD Model:
-
- Datasheet:
- MBR40030CTR
GeneSiC Semiconductor MBR40030CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR40030CTR.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Published2010
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- JESD-30 CodeR-PUFM-X2
- Number of Elements2
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr5mA @ 20V
- Voltage - Forward (Vf) (Max) @ If650mV @ 200A
- Forward Current400A
- Max Reverse Leakage Current1μA
- Max Surge Current3kA
- Output Current-Max200A
- ApplicationPOWER
- Current - Average Rectified (Io)400A DC
- Max Reverse Voltage (DC)30V
- Average Rectified Current400A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)30V
- Diode Configuration1 Pair Common Anode
- RoHS StatusRoHS Compliant
MBR40030CTR Overview
The maximum output voltage is 200A.Keeping the surge current under 3kA and preventing it from exceeding it should be the rule.Devices that have a forward voltage of 400A will operate.The reverse voltage peak of this device is 1A.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.
MBR40030CTR Features
a maximum output voltage of 200A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR40030CTR Applications
There are a lot of GeneSiC Semiconductor
MBR40030CTR applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
The maximum output voltage is 200A.Keeping the surge current under 3kA and preventing it from exceeding it should be the rule.Devices that have a forward voltage of 400A will operate.The reverse voltage peak of this device is 1A.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.
MBR40030CTR Features
a maximum output voltage of 200A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR40030CTR Applications
There are a lot of GeneSiC Semiconductor
MBR40030CTR applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR40030CTR More Descriptions
30V 400A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
DIODE MOD SCHOTT 30V 200A 2TOWER
Schottky Rectifier, Comn And, 30V, 400A, 2-Tower; Diode Module Configuration:1 Pair Common Anode; Forward Current If(Av):400A; Forward Voltage Vf Max:650Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:30V
DIODE MOD SCHOTT 30V 200A 2TOWER
Schottky Rectifier, Comn And, 30V, 400A, 2-Tower; Diode Module Configuration:1 Pair Common Anode; Forward Current If(Av):400A; Forward Voltage Vf Max:650Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:30V
The three parts on the right have similar specifications to MBR40030CTR.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodeTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentMax Surge CurrentOutput Current-MaxApplicationCurrent - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationRoHS StatusVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):Operating Temperature (Max)Element ConfigurationOperating Temperature - JunctionNon-rep Pk Forward Current-MaxReverse Current-MaxView Compare
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MBR40030CTRPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk2010yesActive1 (Unlimited)2EAR99175°C-40°C8541.10.00.80UPPERUNSPECIFIEDR-PUFM-X22Fast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 20V650mV @ 200A400A1μA3kA200APOWER400A DC30V400A11A30V1 Pair Common AnodeRoHS Compliant------------------- -
-------------------------------------700mV @ 20A45VSOT-93Fast Recovery = 200mA (Io)SWITCHMODE™TubeTO-218-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode1mA @ 45V20A-----
-
-------------------------------------600mV @ 20A45VTO-220ABFast Recovery = 200mA (Io)-TubeTO-220-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode1mA @ 45V20A-----
-
PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk-yesActive1 (Unlimited)2EAR99--8541.10.00.80UPPERUNSPECIFIEDR-PUFM-X22Fast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 200V920mV @ 200A----POWER-200V200A1--1 Pair Common AnodeRoHS Compliant-------------150°CCommon Anode-55°C~150°C3000A3000μA
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