MBR3580

GeneSiC Semiconductor MBR3580

Part Number:
MBR3580
Manufacturer:
GeneSiC Semiconductor
Ventron No:
3552407-MBR3580
Description:
DIODE SCHOTTKY 80V 35A DO4
ECAD Model:
Datasheet:
MBR3580

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Specifications
GeneSiC Semiconductor MBR3580 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR3580.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AA, DO-4, Stud
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • JESD-30 Code
    O-MUPM-D1
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    1.5mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    840mV @ 35A
  • Case Connection
    CATHODE
  • Forward Current
    35A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    600A
  • Application
    POWER
  • Max Reverse Voltage (DC)
    80V
  • Average Rectified Current
    35A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    80V
  • Natural Thermal Resistance
    1.5 °C/W
  • RoHS Status
    RoHS Compliant
Description
MBR3580 Overview
1μA volts is the maximum reverse leakage current of this device.In this device, there is an average rectified current of 35A volts.Forward current may not exceed 35A.Phase diode rectifier is the amount an object or material resists a heat flow to a specific temperature difference, and Phase diode rectifiers natural thermal resistance is 1.5 °C/W.This is the maximum amount of 600A surge current that can be used.As the data chart indicates, the peak reverse is 1A.

MBR3580 Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 35A volts
the peak reverse is 1A


MBR3580 Applications
There are a lot of GeneSiC Semiconductor
MBR3580 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MBR3580 More Descriptions
80V 35A DO-4 Silicon Stud Rectifier - Schottky (Standard Configuration)
DIODE SCHOTTKY 80V 35A DO4
Schottky Rectifier, 80V, 35A, Do-203Aa; Repetitive Peak Reverse Voltage:80V; Average Forward Current:35A; Forward Voltage Max:840Mv; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Diode Mounting:Stud Rohs Compliant: Yes |Genesic Semiconductor MBR3580
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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