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MBR30H30CTG

ON Semiconductor MBR30H30CTG

Part Number:
MBR30H30CTG
Manufacturer:
ON Semiconductor
Ventron No:
2415059-MBR30H30CTG
Description:
DIODE ARRAY SCHOTTKY 30V TO220AB
ECAD Model:
Datasheet:
MBR30H30CTG

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Specifications
ON Semiconductor MBR30H30CTG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBR30H30CTG.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Packaging
    Tube
  • Series
    SWITCHMODE™
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    LOW POWER LOSS
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    SINGLE
  • Pin Count
    3
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    800μA @ 30V
  • Voltage - Forward (Vf) (Max) @ If
    480mV @ 15A
  • Forward Current
    15A
  • Max Reverse Leakage Current
    800μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    260A
  • Application
    EFFICIENCY
  • Forward Voltage
    550mV
  • Max Reverse Voltage (DC)
    30V
  • Average Rectified Current
    15A
  • Number of Phases
    1
  • Peak Reverse Current
    800μA
  • Max Repetitive Reverse Voltage (Vrrm)
    30V
  • JEDEC-95 Code
    TO-220AB
  • Peak Non-Repetitive Surge Current
    260A
  • Diode Configuration
    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)
    260A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MBR30H30CTG Overview
There will be no operation of this device when the forward voltage is set to 550mV.In order to prevent the surge current from exceeding 260A, it should be monitored.There will be no operation of this device when the forward voltage is set to 15A.In devices such as this one, reverse voltage peak is set at 800μA.As a reverse biased semiconductor device, its maximal reverse leakage current is 800μA.

MBR30H30CTG Features
550mV forward voltage
a peak voltage of 800μA
a reverse voltage peak of 800μA


MBR30H30CTG Applications
There are a lot of ON Semiconductor
MBR30H30CTG applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR30H30CTG More Descriptions
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 30V V(RRM), Silicon, TO-220AB
Rectifier Diode Switching 30V 15A 3-Pin(3 Tab) TO-220AB Tube / DIODE ARRAY SCHOTTKY 30V TO220AB
Enhanced Schottky rectifiers with lower VF higher surge and lower IR parameters
Schottky Barrier Rectifier, H-Series, 30 V, 30 A
Schottky Rectifier, Cmn Cthd, 15A To-220; Repetitive Peak Reverse Voltage:30V; Average Forward Current:15A; Forward Voltage Max:550Mv; Diode Module Configuration:Dual Common Cathode; Diode Case Style:To-220; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MBR30H30CTG
Product Comparison
The three parts on the right have similar specifications to MBR30H30CTG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Diode Element Material
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Pin Count
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    JEDEC-95 Code
    Peak Non-Repetitive Surge Current
    Diode Configuration
    Max Forward Surge Current (Ifsm)
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Height
    Length
    Width
    Supplier Device Package
    Voltage - DC Reverse (Vr) (Max)
    Current - Average Rectified (Io)
    View Compare
  • MBR30H30CTG
    MBR30H30CTG
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Through Hole
    TO-220-3
    NO
    3
    SILICON
    Tube
    SWITCHMODE™
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    150°C
    -55°C
    LOW POWER LOSS
    8541.10.00.80
    Rectifier Diodes
    SINGLE
    3
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    800μA @ 30V
    480mV @ 15A
    15A
    800μA
    -55°C~150°C
    260A
    EFFICIENCY
    550mV
    30V
    15A
    1
    800μA
    30V
    TO-220AB
    260A
    1 Pair Common Cathode
    260A
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR30100CT-LJ
    MBR30100CT-LJ
    Diodes Incorporated
    -
    5 Weeks
    Through Hole
    TO-220-3
    -
    3
    SILICON
    Tube
    Automotive, AEC-Q101
    2015
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    175°C
    -55°C
    HIGH RELIABILITY
    8541.10.00.80
    -
    SINGLE
    -
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    50μA @ 100V
    840mV @ 15A
    15A
    -
    -55°C~175°C
    -
    GENERAL PURPOSE
    -
    100V
    15A
    1
    50μA
    100V
    TO-220AB
    190A
    1 Pair Common Cathode
    -
    -
    ROHS3 Compliant
    -
    Through Hole
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    16.1mm
    10.2mm
    4.5mm
    -
    -
    -
    MBR30H30CTG vs MBR30100CT-LJ
  • MBR3045CT-G1
    MBR3045CT-G1
    Diodes Incorporated
    -
    22 Weeks
    Through Hole
    TO-220-3
    -
    -
    -
    Tube
    -
    2014
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 45V
    700mV @ 15A
    -
    -
    -65°C~150°C
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1 Pair Common Cathode
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220-3
    45V
    15A
    MBR30H30CTG vs MBR3045CT-G1
  • MBR30020CTRL
    MBR30020CTRL
    GeneSiC Semiconductor
    -
    -
    Chassis Mount
    Twin Tower
    -
    -
    -
    Bulk
    -
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Common Anode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    3mA @ 20V
    580mV @ 150A
    -
    -
    -55°C~150°C
    -
    -
    -
    20V
    150A
    -
    -
    -
    -
    -
    1 Pair Common Anode
    -
    -
    RoHS Compliant
    -
    Chassis Mount
    -
    -
    -
    -
    -
    -
    Twin Tower
    20V
    150A
    MBR30H30CTG vs MBR30020CTRL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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