Diodes Incorporated MBR3035PT

Name: MBR3035PT
Brand: Diodes Incorporated
SKU: 2416504-MBR3035PT
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBR3035PT

Manufacturer:: Diodes Incorporated

Ventron No:: 2416504-MBR3035PT

Description:: DIODE ARRAY SCHOTTKY 35V TO3P

ECAD Model:

Datasheet:: MBR3035PT

Specifications

Diodes Incorporated MBR3035PT technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MBR3035PT.

Factory Lead Time
32 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Additional Feature
LOW POWER LOSS, FREE WHEELING DIODE
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MBR3035PT
Pin Count
3
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 35V
Voltage - Forward (Vf) (Max) @ If
760mV @ 30A
Forward Current
30A
Operating Temperature - Junction
-65°C~150°C
Application
EFFICIENCY
Forward Voltage
650mV
Max Reverse Voltage (DC)
35V
Average Rectified Current
30A
Number of Phases
1
Peak Reverse Current
1mA
Max Repetitive Reverse Voltage (Vrrm)
35V
Peak Non-Repetitive Surge Current
200A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
200A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

MBR3035PT Overview
The device operates when the forward voltage is set to 650mV.The device operates when the forward voltage is set to 30A.Typical devices like this one are powered by reverse voltage peaks of 1mA.

MBR3035PT Features
650mV forward voltage
a peak voltage of 1mA
a reverse voltage peak of 1mA

MBR3035PT Applications
There are a lot of Diodes Incorporated
MBR3035PT applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

MBR3035PT More Descriptions

Tube Through Hole Schottky 1Pair Common Cathode Diode Array 760mV @ 30A 30A 760mV 150C
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247AD
Diode Schottky 35V 30A 3-Pin(3 Tab) TO-247AD Rail - Rail/Tube
Schottky Rectifier; Package/Case:TO-3P; Current Rating:30A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Through Hole ;RoHS Compliant: Yes
This center tap MBR Schottky rectifier is optimal for secondary rectification and free wheeling application for high efficiency DC to DC convertor design, which features very low forward voltage drop and low leakage current.

Product Comparison

The three parts on the right have similar specifications to MBR3035PT.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Diode Configuration

Max Forward Surge Current (Ifsm)

Radiation Hardening

RoHS Status

Supplier Device Package

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Weight

Height

Length

Width

View Compare
MBR3035PT

Diodes Incorporated

32 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

SILICON

Tube

2005

e3

no

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

150°C

-65°C

LOW POWER LOSS, FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

SINGLE

260

40

MBR3035PT

3

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 35V

760mV @ 30A

30A

-65°C~150°C

EFFICIENCY

650mV

35V

30A

1

1mA

35V

200A

1 Pair Common Cathode

200A

No

ROHS3 Compliant

-

-

-

-

-

-

-

-
MBR3045CT-G1

Diodes Incorporated

22 Weeks

-

Through Hole

TO-220-3

-

-

Tube

2014

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

100μA @ 45V

700mV @ 15A

-

-65°C~150°C

-

-

-

-

-

-

-

-

1 Pair Common Cathode

-

-

ROHS3 Compliant

TO-220-3

45V

15A

-

-

-

-

MBR3035PT vs MBR3045CT-G1
MBR30020CTRL

GeneSiC Semiconductor

-

Chassis Mount

Chassis Mount

Twin Tower

-

-

Bulk

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Common Anode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

3mA @ 20V

580mV @ 150A

-

-55°C~150°C

-

-

20V

150A

-

-

-

-

1 Pair Common Anode

-

-

RoHS Compliant

Twin Tower

20V

150A

-

-

-

-

MBR3035PT vs MBR30020CTRL
MBR3030PT

Diodes Incorporated

16 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

SILICON

Tube

2005

e3

no

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

150°C

-65°C

LOW POWER LOSS, FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

SINGLE

260

40

-

3

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 30V

760mV @ 30A

30A

-65°C~150°C

EFFICIENCY

760mV

30V

30A

1

1mA

30V

200A

1 Pair Common Cathode

200A

No

ROHS3 Compliant

-

-

-

6.756003g

22.38mm

16.25mm

5.36mm

MBR3035PT vs MBR3030PT