MBR30080CTR

GeneSiC Semiconductor MBR30080CTR

Part Number:
MBR30080CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2419985-MBR30080CTR
Description:
DIODE MODULE 80V 300A 2TOWER
ECAD Model:
Datasheet:
MBR30080CTR

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Specifications
GeneSiC Semiconductor MBR30080CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR30080CTR.
  • Factory Lead Time
    4 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Element Configuration
    Common Anode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    8mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    840mV @ 150A
  • Forward Current
    300A
  • Max Reverse Leakage Current
    1μA
  • Max Surge Current
    2.5kA
  • Output Current-Max
    150A
  • Application
    POWER
  • Current - Average Rectified (Io)
    300A DC
  • Max Reverse Voltage (DC)
    80V
  • Average Rectified Current
    300A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    80V
  • Diode Configuration
    1 Pair Common Anode
  • RoHS Status
    RoHS Compliant
Description
MBR30080CTR Overview
There is a maximum output voltage of 150A.As a general rule, surge currents should be monitored and kept below 2.5kA.In operation, this device will be set to 300A volts forward.This device is powered with reverse voltage peak of 1A V.When it's reverse biased, it's maximal reverse leakage current is 1μA.

MBR30080CTR Features
a maximum output voltage of 150A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR30080CTR Applications
There are a lot of GeneSiC Semiconductor
MBR30080CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR30080CTR More Descriptions
80V 300A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
DIODE MOD SCHOTT 80V 150A 2TOWER
Schottky Rectifier, Comn And, 80V, 300A, 2-Tower; Diode Module Configuration:1 Pair Common Anode; Forward Current If(Av):300A; Forward Voltage Vf Max:840Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:80V
Product Comparison
The three parts on the right have similar specifications to MBR30080CTR.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Max Surge Current
    Output Current-Max
    Application
    Current - Average Rectified (Io)
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    RoHS Status
    Number of Pins
    Published
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Additional Feature
    Subcategory
    Base Part Number
    Pin Count
    Operating Temperature - Junction
    JEDEC-95 Code
    Peak Non-Repetitive Surge Current
    Radiation Hardening
    Supplier Device Package
    Voltage - DC Reverse (Vr) (Max)
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Diode Configuration:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io) (per Diode):
    View Compare
  • MBR30080CTR
    MBR30080CTR
    4 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -40°C
    8541.10.00.80
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    R-PUFM-X2
    2
    Common Anode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    8mA @ 20V
    840mV @ 150A
    300A
    1μA
    2.5kA
    150A
    POWER
    300A DC
    80V
    300A
    1
    1A
    80V
    1 Pair Common Anode
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR3050PT-E3/45
    10 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    SILICON
    Tube
    Active
    1 (Unlimited)
    3
    EAR99
    150°C
    -65°C
    8541.10.00.80
    SINGLE
    -
    -
    -
    -
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1mA @ 50V
    760mV @ 30A
    30A
    5mA
    200A
    15A
    EFFICIENCY
    -
    50V
    30A
    1
    5mA
    50V
    1 Pair Common Cathode
    ROHS3 Compliant
    3
    2012
    e3
    yes
    Matte Tin (Sn)
    FREE WHEELING DIODE, LOW POWER LOSS
    Rectifier Diodes
    MBR3050PT
    2
    -65°C~150°C
    TO-247AD
    200A
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR30020CTRL
    -
    Chassis Mount
    Chassis Mount
    Twin Tower
    -
    Bulk
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Common Anode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    3mA @ 20V
    580mV @ 150A
    -
    -
    -
    -
    -
    150A
    20V
    150A
    -
    -
    -
    1 Pair Common Anode
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -55°C~150°C
    -
    -
    -
    Twin Tower
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR3045PT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    760mV @ 30A
    45V
    TO-3P
    Fast Recovery = 200mA (Io)
    -
    Tube
    TO-3P-3, SC-65-3
    -65°C ~ 150°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    1mA @ 45V
    30A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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