MBR30080CT

GeneSiC Semiconductor MBR30080CT

Part Number:
MBR30080CT
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2419984-MBR30080CT
Description:
DIODE MODULE 80V 300A 2TOWER
ECAD Model:
Datasheet:
MBR30080CT

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Specifications
GeneSiC Semiconductor MBR30080CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR30080CT.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    8mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    840mV @ 150A
  • Forward Current
    300A
  • Max Reverse Leakage Current
    1μA
  • Max Surge Current
    2.5kA
  • Output Current-Max
    150A
  • Application
    POWER
  • Current - Average Rectified (Io)
    300A DC
  • Max Reverse Voltage (DC)
    80V
  • Average Rectified Current
    300A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    80V
  • Diode Configuration
    1 Pair Common Cathode
  • RoHS Status
    RoHS Compliant
Description
MBR30080CT Overview
A maximum output voltage of 150A can be supported.Surge currents should be monitored and prevented from exceeding 2.5kA.This device will operate when the forward voltage is set to 300A.A reverse voltage peak of 1A is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.

MBR30080CT Features
a maximum output voltage of 150A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR30080CT Applications
There are a lot of GeneSiC Semiconductor
MBR30080CT applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR30080CT More Descriptions
80V 300A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 300A 80P56RV
Schottky Rectifier, Comn Cthd, 80V, 300A, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):300A; Forward Voltage Vf Max:840Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:80V
Product Comparison
The three parts on the right have similar specifications to MBR30080CT.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Max Operating Temperature
    Min Operating Temperature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Max Surge Current
    Output Current-Max
    Application
    Current - Average Rectified (Io)
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    RoHS Status
    Number of Pins
    Series
    Published
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Reach Compliance Code
    Operating Temperature - Junction
    JEDEC-95 Code
    Peak Non-Repetitive Surge Current
    Height
    Length
    Width
    Subcategory
    Base Part Number
    Pin Count
    Radiation Hardening
    Supplier Device Package
    Voltage - DC Reverse (Vr) (Max)
    View Compare
  • MBR30080CT
    MBR30080CT
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    yes
    Active
    1 (Unlimited)
    2
    175°C
    -40°C
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    R-PUFM-X2
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    8mA @ 20V
    840mV @ 150A
    300A
    1μA
    2.5kA
    150A
    POWER
    300A DC
    80V
    300A
    1
    1A
    80V
    1 Pair Common Cathode
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR30100CT-LJ
    -
    5 Weeks
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    Tube
    -
    Obsolete
    1 (Unlimited)
    3
    175°C
    -55°C
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    50μA @ 100V
    840mV @ 15A
    15A
    -
    -
    -
    GENERAL PURPOSE
    -
    100V
    15A
    1
    50μA
    100V
    1 Pair Common Cathode
    ROHS3 Compliant
    3
    Automotive, AEC-Q101
    2015
    e3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    8541.10.00.80
    not_compliant
    -55°C~175°C
    TO-220AB
    190A
    16.1mm
    10.2mm
    4.5mm
    -
    -
    -
    -
    -
    -
  • MBR3050PT-E3/45
    -
    10 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    SILICON
    Tube
    yes
    Active
    1 (Unlimited)
    3
    150°C
    -65°C
    SINGLE
    -
    -
    -
    -
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1mA @ 50V
    760mV @ 30A
    30A
    5mA
    200A
    15A
    EFFICIENCY
    -
    50V
    30A
    1
    5mA
    50V
    1 Pair Common Cathode
    ROHS3 Compliant
    3
    -
    2012
    e3
    EAR99
    Matte Tin (Sn)
    FREE WHEELING DIODE, LOW POWER LOSS
    8541.10.00.80
    -
    -65°C~150°C
    TO-247AD
    200A
    -
    -
    -
    Rectifier Diodes
    MBR3050PT
    2
    No
    -
    -
  • MBR3045CT-G1
    -
    22 Weeks
    -
    Through Hole
    TO-220-3
    -
    Tube
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 45V
    700mV @ 15A
    -
    -
    -
    -
    -
    15A
    -
    -
    -
    -
    -
    1 Pair Common Cathode
    ROHS3 Compliant
    -
    -
    2014
    -
    -
    -
    -
    -
    -
    -65°C~150°C
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220-3
    45V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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