GeneSiC Semiconductor MBR30080CT
- Part Number:
- MBR30080CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2419984-MBR30080CT
- Description:
- DIODE MODULE 80V 300A 2TOWER
- Datasheet:
- MBR30080CT
GeneSiC Semiconductor MBR30080CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR30080CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PUFM-X2
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr8mA @ 20V
- Voltage - Forward (Vf) (Max) @ If840mV @ 150A
- Forward Current300A
- Max Reverse Leakage Current1μA
- Max Surge Current2.5kA
- Output Current-Max150A
- ApplicationPOWER
- Current - Average Rectified (Io)300A DC
- Max Reverse Voltage (DC)80V
- Average Rectified Current300A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)80V
- Diode Configuration1 Pair Common Cathode
- RoHS StatusRoHS Compliant
MBR30080CT Overview
A maximum output voltage of 150A can be supported.Surge currents should be monitored and prevented from exceeding 2.5kA.This device will operate when the forward voltage is set to 300A.A reverse voltage peak of 1A is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBR30080CT Features
a maximum output voltage of 150A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR30080CT Applications
There are a lot of GeneSiC Semiconductor
MBR30080CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
A maximum output voltage of 150A can be supported.Surge currents should be monitored and prevented from exceeding 2.5kA.This device will operate when the forward voltage is set to 300A.A reverse voltage peak of 1A is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
MBR30080CT Features
a maximum output voltage of 150A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR30080CT Applications
There are a lot of GeneSiC Semiconductor
MBR30080CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR30080CT More Descriptions
80V 300A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 300A 80P56RV
Schottky Rectifier, Comn Cthd, 80V, 300A, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):300A; Forward Voltage Vf Max:840Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:80V
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 300A 80P56RV
Schottky Rectifier, Comn Cthd, 80V, 300A, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):300A; Forward Voltage Vf Max:840Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:80V
The three parts on the right have similar specifications to MBR30080CT.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Operating TemperatureMin Operating TemperatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentMax Surge CurrentOutput Current-MaxApplicationCurrent - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationRoHS StatusNumber of PinsSeriesPublishedJESD-609 CodeECCN CodeTerminal FinishAdditional FeatureHTS CodeReach Compliance CodeOperating Temperature - JunctionJEDEC-95 CodePeak Non-Repetitive Surge CurrentHeightLengthWidthSubcategoryBase Part NumberPin CountRadiation HardeningSupplier Device PackageVoltage - DC Reverse (Vr) (Max)View Compare
-
MBR30080CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulkyesActive1 (Unlimited)2175°C-40°CUPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIEDR-PUFM-X22Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky8mA @ 20V840mV @ 150A300A1μA2.5kA150APOWER300A DC80V300A11A80V1 Pair Common CathodeRoHS Compliant----------------------
-
-5 WeeksThrough HoleThrough HoleTO-220-3SILICONTube-Obsolete1 (Unlimited)3175°C-55°CSINGLE-NOT SPECIFIEDNOT SPECIFIED-2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky50μA @ 100V840mV @ 15A15A---GENERAL PURPOSE-100V15A150μA100V1 Pair Common CathodeROHS3 Compliant3Automotive, AEC-Q1012015e3EAR99Matte Tin (Sn)HIGH RELIABILITY8541.10.00.80not_compliant-55°C~175°CTO-220AB190A16.1mm10.2mm4.5mm------
-
-10 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-3SILICONTubeyesActive1 (Unlimited)3150°C-65°CSINGLE----2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 50V760mV @ 30A30A5mA200A15AEFFICIENCY-50V30A15mA50V1 Pair Common CathodeROHS3 Compliant3-2012e3EAR99Matte Tin (Sn)FREE WHEELING DIODE, LOW POWER LOSS8541.10.00.80--65°C~150°CTO-247AD200A---Rectifier DiodesMBR3050PT2No--
-
-22 Weeks-Through HoleTO-220-3-Tube-Active1 (Unlimited)----------Fast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 45V700mV @ 15A-----15A-----1 Pair Common CathodeROHS3 Compliant--2014-------65°C~150°C---------TO-220-345V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
14 March 2024
Comprehensive Understanding of the 78M05 Chip
Ⅰ. Development history of linear voltage regulatorsⅡ. Introduction to 78M05Ⅲ. Pin layout of 78M05Ⅳ. External components of 78M05Ⅴ. Technical key points of 78M05Ⅵ. Internal circuit diagram of 78M05Ⅶ.... -
14 March 2024
What is the NE555 and How Does it Work?
Ⅰ. The birth background of NE555Ⅱ. Introduction to NE555Ⅲ. Design of NE555 timerⅣ. Internal composition of NE555Ⅴ. Operating modes of the NE555Ⅵ. Working principle of NE555Ⅶ. Application of... -
15 March 2024
ULN2003 Alternatives, Characteristics, Working Principle and Application
Ⅰ. ULN2003 overviewⅡ. What are the characteristics of ULN2003?Ⅲ. Pin diagram and functions of ULN2003Ⅳ. Working principle and function of ULN2003Ⅴ. ULN2003 drive circuit diagramⅥ. Where is ULN2003... -
15 March 2024
Detailed Explanation of 24C02 EEPROM Memory Chip
Ⅰ. Overview of 24C02Ⅱ. Functions of 24C02Ⅲ. Basic operations of 24C02Ⅳ. Application of 24C02Ⅴ. 24C02 pinoutⅥ. How to protect the data of 24C02?Ⅶ. How to use 24C02?EEPROM refers...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.