ON Semiconductor MBR2535CTG
- Part Number:
- MBR2535CTG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2822081-MBR2535CTG
- Description:
- DIODE ARRAY SCHOTTKY 35V TO220AB
- Datasheet:
- MBR2535CTG
ON Semiconductor MBR2535CTG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBR2535CTG.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight4.535924g
- PackagingTube
- SeriesSWITCHMODE™
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Capacitance500pF
- Voltage - Rated DC35V
- Current Rating25A
- Base Part NumberMBR2535CT
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr200μA @ 35V
- Voltage - Forward (Vf) (Max) @ If820mV @ 30A
- Forward Current30A
- Max Reverse Leakage Current200μA
- Operating Temperature - Junction-65°C~175°C
- Max Surge Current150A
- Voltage - DC Reverse (Vr) (Max)35V
- Current - Average Rectified (Io)30A
- Forward Voltage820mV
- Max Reverse Voltage (DC)35V
- Average Rectified Current30A
- Peak Reverse Current200μA
- Max Repetitive Reverse Voltage (Vrrm)35V
- Peak Non-Repetitive Surge Current150A
- Diode Configuration1 Pair Common Cathode
- Max Forward Surge Current (Ifsm)150A
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MBR2535CTG Overview
A forward voltage of 820mV will enable the device to operate.We should be monitoring the surge current and keeping it below 150A.A forward voltage of 30A will enable the device to operate.Using the part, you can draw a current of 25A.Approximately 500pF farads of capacitance are present in this device.Array is powered by a reverse voltage peak of 200μA.When reverse biased, its maximal reverse leakage current is 200μA, which corresponds to its maximum reverse leakage current.
MBR2535CTG Features
820mV forward voltage
500pF farads
a peak voltage of 200μA
a reverse voltage peak of 200μA
MBR2535CTG Applications
There are a lot of ON Semiconductor
MBR2535CTG applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
A forward voltage of 820mV will enable the device to operate.We should be monitoring the surge current and keeping it below 150A.A forward voltage of 30A will enable the device to operate.Using the part, you can draw a current of 25A.Approximately 500pF farads of capacitance are present in this device.Array is powered by a reverse voltage peak of 200μA.When reverse biased, its maximal reverse leakage current is 200μA, which corresponds to its maximum reverse leakage current.
MBR2535CTG Features
820mV forward voltage
500pF farads
a peak voltage of 200μA
a reverse voltage peak of 200μA
MBR2535CTG Applications
There are a lot of ON Semiconductor
MBR2535CTG applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR2535CTG More Descriptions
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-220AB
Diode Schottky 35V 30A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
30A Dual Common Cathode 200Ã×A@35V 35V 820mV@30A TO-220 Diodes - General Purpose ROHS
Diode, Schottky Barrier, Vr 35V, If 30A, Pkg TO-220AB, Vf 0.65V, Tj 175degc, Cs 150A | ON Semiconductor MBR2535CTG
...using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following
SCHOTTKY RECT, 35V, 30A, TO-220; Repetitive Reverse Voltage Vrrm Max: 35V; Forward Current If(AV): 30A; Diode Configuration: Dual Common Cathode; Diode Case Style: TO-220; No. of Pins: 3Pins; Forward Voltage VF Max: 820mV; For
Diode Schottky 35V 30A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
30A Dual Common Cathode 200Ã×A@35V 35V 820mV@30A TO-220 Diodes - General Purpose ROHS
Diode, Schottky Barrier, Vr 35V, If 30A, Pkg TO-220AB, Vf 0.65V, Tj 175degc, Cs 150A | ON Semiconductor MBR2535CTG
...using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following
SCHOTTKY RECT, 35V, 30A, TO-220; Repetitive Reverse Voltage Vrrm Max: 35V; Forward Current If(AV): 30A; Diode Configuration: Dual Common Cathode; Diode Case Style: TO-220; No. of Pins: 3Pins; Forward Voltage VF Max: 820mV; For
The three parts on the right have similar specifications to MBR2535CTG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightPackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureCapacitanceVoltage - Rated DCCurrent RatingBase Part NumberElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Forward VoltageMax Reverse Voltage (DC)Average Rectified CurrentPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Peak Non-Repetitive Surge CurrentDiode ConfigurationMax Forward Surge Current (Ifsm)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountDiode Element MaterialNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating Temperature (Max)Number of ElementsApplicationNumber of PhasesNon-rep Pk Forward Current-MaxReverse Current-MaxVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):JESD-609 CodePbfree CodeTerminal FinishSubcategoryPin CountJEDEC-95 CodeView Compare
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MBR2535CTGACTIVE (Last Updated: 1 day ago)8 WeeksTinThrough HoleTO-220-33TO-220AB4.535924gTubeSWITCHMODE™2006Active1 (Unlimited)175°C-65°C500pF35V25AMBR2535CTCommon CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky200μA @ 35V820mV @ 30A30A200μA-65°C~175°C150A35V30A820mV35V30A200μA35V150A1 Pair Common Cathode150A15.748mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free------------------------------------
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-12 Weeks-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---Tape & Reel (TR)-2017Active1 (Unlimited)------Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 35V840mV @ 10A---65°C~150°C----35V10A---1 Pair Common Cathode------ROHS3 Compliant-Through HoleSILICON3EAR99FREE WHEELING DIODE8541.10.00.80SINGLE26040R-PSIP-T3150°C2GENERAL PURPOSE1150A100μA-------------------
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-------------------------------------------------------------840mV @ 20A35VTO-220-3Fast Recovery = 200mA (Io)-TubeTO-220-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode100µA @ 35V20A------
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---Through HoleTO-220-33-6.000006gTube-2005Obsolete1 (Unlimited)150°C-65°C---MBR2030CTCommon CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 30V840mV @ 20A20A--55°C~150°C---840mV30V20A100μA30V150A1 Pair Common Cathode150A8.89mm10.4mm4.82mm-NoROHS3 Compliant-Through HoleSILICON3EAR99LOW POWER LOSS, FREE WHEELING DIODE8541.10.00.80SINGLE26040--2EFFICIENCY1---------------e3noMatte Tin (Sn)Rectifier Diodes3TO-220AB
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