Vishay Semiconductor Diodes Division MBR2535CT
- Part Number:
- MBR2535CT
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2417351-MBR2535CT
- Description:
- DIODE ARRAY SCHOTTKY 35V TO220AB
Vishay Semiconductor Diodes Division MBR2535CT technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division MBR2535CT.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- PackagingTube
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Capacitance700pF
- Voltage - Rated DC30V
- Current Rating30A
- Base Part NumberMBR2535CT
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr200μA @ 35V
- Voltage - Forward (Vf) (Max) @ If820mV @ 30A
- Max Reverse Leakage Current200μA
- Operating Temperature - Junction-65°C~150°C
- Max Surge Current150A
- Voltage - DC Reverse (Vr) (Max)35V
- Current - Average Rectified (Io)15A
- Max Reverse Voltage (DC)35V
- Average Rectified Current15A
- Diode Configuration1 Pair Common Cathode
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
MBR2535CT Overview
Array is important to monArrayor the surge current and make sure that Array does not exceed 150A.From the part, a current of 30A can be drawn.An approximate capacitance of 700pF farads is present in this device.This semiconductor device's maximal reverse leakage current is 200μA kA, which is its reverse leakage current when reverse biased.
MBR2535CT Features
700pF farads
MBR2535CT Applications
There are a lot of Vishay Semiconductor Diodes Division
MBR2535CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
Array is important to monArrayor the surge current and make sure that Array does not exceed 150A.From the part, a current of 30A can be drawn.An approximate capacitance of 700pF farads is present in this device.This semiconductor device's maximal reverse leakage current is 200μA kA, which is its reverse leakage current when reverse biased.
MBR2535CT Features
700pF farads
MBR2535CT Applications
There are a lot of Vishay Semiconductor Diodes Division
MBR2535CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR2535CT More Descriptions
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB
Diode Schottky 35V 25A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Schottky Rectifier; Package/Case:TO-220; Current Rating:30A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Through Hole ;RoHS Compliant: Yes
This center tap MBR Schottky rectifier is optimal for secondary rectification and free wheeling application for high efficiency DC to DC convertor design, which features very low forward voltage drop and low leakage current.
Diode Schottky 35V 25A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
Schottky Rectifier; Package/Case:TO-220; Current Rating:30A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Through Hole ;RoHS Compliant: Yes
This center tap MBR Schottky rectifier is optimal for secondary rectification and free wheeling application for high efficiency DC to DC convertor design, which features very low forward voltage drop and low leakage current.
The three parts on the right have similar specifications to MBR2535CT.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackagePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureCapacitanceVoltage - Rated DCCurrent RatingBase Part NumberElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentDiode ConfigurationRoHS StatusLead FreeVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):WeightDiode Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsForward CurrentApplicationForward VoltageNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)JEDEC-95 CodePeak Non-Repetitive Surge CurrentMax Forward Surge Current (Ifsm)HeightLengthWidthRadiation HardeningLifecycle StatusFactory Lead TimeContact PlatingSeriesREACH SVHCView Compare
-
MBR2535CTThrough HoleThrough HoleTO-220-33TO-220ABTube2012Obsolete1 (Unlimited)150°C-65°C700pF30V30AMBR2535CTCommon CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky200μA @ 35V820mV @ 30A200μA-65°C~150°C150A35V15A35V15A1 Pair Common CathodeNon-RoHS CompliantLead Free-----------------------------------------------
-
------------------------------840mV @ 20A35VTO-220-3Fast Recovery = 200mA (Io)-TubeTO-220-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode100µA @ 35V20A---------------------------------
-
Through HoleThrough HoleTO-220-33-Tube2005Obsolete1 (Unlimited)150°C-65°C---MBR2030CTCommon CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 30V840mV @ 20A--55°C~150°C---30V20A1 Pair Common CathodeROHS3 Compliant--------------6.000006gSILICONe3no3EAR99Matte Tin (Sn)LOW POWER LOSS, FREE WHEELING DIODE8541.10.00.80Rectifier DiodesSINGLE260403220AEFFICIENCY840mV1100μA30VTO-220AB150A150A8.89mm10.4mm4.82mmNo-----
-
-Through HoleTO-220-33TO-220ABTube2003Active1 (Unlimited)175°C-65°C500pF30V10AMBR2030CTCommon CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 30V520mV @ 10A--65°C~175°C-30V10A30V10A1 Pair Common CathodeROHS3 CompliantLead Free-------------4.535924g--------------20A-580mV-5mA30V-150A150A15.748mm10.287mm4.826mmNoACTIVE (Last Updated: 1 day ago)11 WeeksTinSWITCHMODE™No SVHC
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 September 2023
Power Transistor IC LM317LZ: Symbol, Features and Package
Ⅰ. Overview of LM317LZⅡ. Symbol and Footprint of LM317LZⅢ. Technical parametersⅣ. Features of LM317LZⅤ. Pins and package of LM317LZⅥ. Advantages and disadvantages of LM317LZⅦ. How to optimize the... -
22 September 2023
LM301AN Operational Amplifier: Equivalent, Circuit and Package
Ⅰ. What is LM301AN?Ⅱ. Symbol, footprint and pin connection of LM301ANⅢ. Technical parametersⅣ. LM301AN tone control circuitⅤ. Features of LM301ANⅥ. What is the difference between LM301AN and LM709?Ⅶ.... -
25 September 2023
Get to Know the IRFB7545PBF Power MOSFET
Ⅰ. What is IRFB7545PBF?Ⅱ. Symbol and Footprint of IRFB7545PBFⅢ. Technical parametersⅣ. Features of IRFB7545PBFⅤ. Pinout and package of IRFB7545PBFⅥ. Application of IRFB7545PBFⅦ. How to use IRFB7545PBF?Ⅷ. How to... -
25 September 2023
A Comparison of 2N7000 and BS170 N-Channel Mosfet Transistors
Ⅰ. What is a MOS field effect transistor?Ⅱ. Overview of 2N7000Ⅲ. Overview of BS170Ⅳ. 2N7000 vs BS170: PCB footprintsⅤ. 2N7000 vs BS170: Technical parametersⅥ. 2N7000 vs BS170: FeaturesⅦ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.