GeneSiC Semiconductor MBR20060CT

Name: MBR20060CT
Brand: GeneSiC Semiconductor
SKU: 2420001-MBR20060CT
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBR20060CT

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2420001-MBR20060CT

Description:: DIODE MODULE 60V 200A 2TOWER

ECAD Model:

Datasheet:: MBR20060CT

Specifications

GeneSiC Semiconductor MBR20060CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR20060CT.

Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2012
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
750mV @ 100A
Forward Current
200A
Max Reverse Leakage Current
1μA
Max Surge Current
1.5kA
Output Current-Max
100A
Application
POWER
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
60V
Average Rectified Current
200A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
60V
Diode Configuration
1 Pair Common Cathode
RoHS Status
RoHS Compliant

Description

MBR20060CT Overview
A maximum output voltage of 100A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 1.5kA.The device operates when the forward voltage is set to 200A.Typical devices like this one are powered by reverse voltage peaks of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.

MBR20060CT Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A

MBR20060CT Applications
There are a lot of GeneSiC Semiconductor
MBR20060CT applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

MBR20060CT More Descriptions

60V 200A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Schottky Diodes & Rectifiers 60V 200A Schottky Recovery
DIODE MOD SCHOTT 60V 200A 2TOWER
Schottky Rectifier, Common Cathode, 60V, 200A, 2-Tower; Repetitive Peak Reverse Voltage:60V; Average Forward Current:200A; Forward Voltage Max:750Mv; Diode Module Configuration:1 Pair Common Cathode; Diode Case Style:Twin Tower Rohs Compliant: Yes |Genesic Semiconductor MBR20060CT

Product Comparison

The three parts on the right have similar specifications to MBR20060CT.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Max Surge Current

Output Current-Max

Application

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Diode Configuration

RoHS Status

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Moisture Sensitivity Level (MSL):

Lead Free Status / RoHS Status:

Diode Type:

Diode Configuration:

Detailed Description:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io) (per Diode):

Series

Additional Feature

Reach Compliance Code

Operating Temperature (Max)

Operating Temperature - Junction

Non-rep Pk Forward Current-Max

Reverse Current-Max

View Compare
MBR20060CT

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

SILICON

Bulk

2012

yes

Active

1 (Unlimited)

2

EAR99

175°C

-40°C

8541.10.00.80

UPPER

UNSPECIFIED

NOT SPECIFIED

NOT SPECIFIED

R-PUFM-X2

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

5mA @ 20V

750mV @ 100A

200A

1μA

1.5kA

100A

POWER

200A DC

60V

200A

1

1A

60V

1 Pair Common Cathode

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MBR2040CT

PANJIT

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

840mV @ 20A

40V

TO-220AB

Fast Recovery = 200mA (Io)

-

Tube

TO-220-3

-55°C ~ 150°C

Through Hole

1 (Unlimited)

Contains lead / RoHS Compliant

Schottky

1 Pair Common Cathode

Diode Array 1 Pair Common Cathode Schottky 40V 20A Through Hole TO-220-3

100µA @ 40V

20A

-

-

-

-

-

-

-

MBR20060CT vs MBR2040CT
VS-MBR20100CT-1HM3

Vishay Semiconductor Diodes Division

-

12 Weeks

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

SILICON

Tape & Reel (TR)

2017

-

Active

1 (Unlimited)

3

EAR99

-

-

8541.10.00.80

SINGLE

-

NOT SPECIFIED

NOT SPECIFIED

R-PSIP-T3

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

100μA @ 100V

800mV @ 10A

-

-

-

-

GENERAL PURPOSE

-

100V

10A

1

-

-

1 Pair Common Cathode

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Automotive, AEC-Q101

FREE WHEELING DIODE

unknown

150°C

-55°C~150°C

850A

100μA

MBR20060CT vs VS-MBR20100CT-1HM3
MBR20100CTP

Diodes Incorporated

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

850mV @ 10A

100V

ITO-220S

Fast Recovery = 200mA (Io)

-

Tube

TO-220-3 Isolated Tab

-65°C ~ 175°C

Through Hole

-

-

Schottky

1 Pair Common Cathode

-

100µA @ 100V

10A

-

-

-

-

-

-

-

MBR20060CT vs MBR20100CTP