GeneSiC Semiconductor MBR20040CTR

Name: MBR20040CTR
Brand: GeneSiC Semiconductor
SKU: 2419936-MBR20040CTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBR20040CTR

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2419936-MBR20040CTR

Description:: DIODE MODULE 40V 200A 2TOWER

ECAD Model:

Datasheet:: MBR20040CTR

Specifications

GeneSiC Semiconductor MBR20040CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR20040CTR.

Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
650mV @ 100A
Forward Current
200A
Max Reverse Leakage Current
1μA
Max Surge Current
1.5kA
Output Current-Max
100A
Application
POWER
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
40V
Average Rectified Current
200A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
40V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant

Description

MBR20040CTR Overview
A maximum output voltage of 100A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 1.5kA.The device operates when the forward voltage is set to 200A.Typical devices like this one are powered by reverse voltage peaks of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.

MBR20040CTR Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A

MBR20040CTR Applications
There are a lot of GeneSiC Semiconductor
MBR20040CTR applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

MBR20040CTR More Descriptions

40V 200A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
DIODE MOD SCHOTT 40V 200A 2TOWER
SCHOTTKY RECTIFIER, COMN AND, 40V, 200A, 2-TOWER; Diode Module Configuration:1 Pair Common Anode; Forward Current If(AV):200A; Forward Voltage VF Max:650mV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:40V

Product Comparison

The three parts on the right have similar specifications to MBR20040CTR.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Max Surge Current

Output Current-Max

Application

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Diode Configuration

RoHS Status

Number of Pins

Weight

JESD-609 Code

Terminal Finish

Additional Feature

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Operating Temperature - Junction

Forward Voltage

JEDEC-95 Code

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Length

Width

Radiation Hardening

Operating Temperature (Max)

Non-rep Pk Forward Current-Max

Reverse Current-Max

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Diode Configuration:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io) (per Diode):

View Compare
MBR20040CTR

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount

Chassis Mount

Twin Tower

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

2

EAR99

175°C

-40°C

8541.10.00.80

UPPER

UNSPECIFIED

R-PUFM-X2

2

Common Anode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

5mA @ 20V

650mV @ 100A

200A

1μA

1.5kA

100A

POWER

200A DC

40V

200A

1

1A

40V

1 Pair Common Anode

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MBR2040CT

Diodes Incorporated

-

17 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

Tube

2005

no

Active

1 (Unlimited)

3

EAR99

150°C

-65°C

8541.10.00.80

SINGLE

-

-

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

100μA @ 40V

840mV @ 20A

20A

-

-

-

EFFICIENCY

-

40V

20A

1

100μA

40V

1 Pair Common Cathode

ROHS3 Compliant

3

6.000006g

e3

Matte Tin (Sn)

LOW POWER LOSS, FREE WHEELING DIODE

Rectifier Diodes

260

40

3

-55°C~150°C

840mV

TO-220AB

150A

150A

8.89mm

10.4mm

4.82mm

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MBR20040CTR vs MBR2040CT
VS-MBR2035CT-1-M3

Vishay Semiconductor Diodes Division

-

12 Weeks

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

SILICON

Tape & Reel (TR)

2017

-

Active

1 (Unlimited)

3

EAR99

-

-

8541.10.00.80

SINGLE

-

R-PSIP-T3

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

100μA @ 35V

840mV @ 10A

-

-

-

-

GENERAL PURPOSE

-

35V

10A

1

-

-

1 Pair Common Cathode

ROHS3 Compliant

-

-

-

-

FREE WHEELING DIODE

-

260

40

-

-65°C~150°C

-

-

-

-

-

-

-

-

150°C

150A

100μA

-

-

-

-

-

-

-

-

-

-

-

-

-

MBR20040CTR vs VS-MBR2035CT-1-M3
MBR2035CT

Diodes Incorporated

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

840mV @ 20A

35V

TO-220AB

Fast Recovery = 200mA (Io)

-

Tube

TO-220-3

-55°C ~ 150°C

Through Hole

Schottky

1 Pair Common Cathode

100µA @ 35V

20A

MBR20040CTR vs MBR2035CT