MBR20020CTR

GeneSiC Semiconductor MBR20020CTR

Part Number:
MBR20020CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2420207-MBR20020CTR
Description:
DIODE MODULE 20V 200A 2TOWER
ECAD Model:
Datasheet:
MBR20020CTR

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Specifications
GeneSiC Semiconductor MBR20020CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR20020CTR.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Element Configuration
    Common Anode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    5mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    650mV @ 100A
  • Forward Current
    200A
  • Max Reverse Leakage Current
    1μA
  • Max Surge Current
    1.5kA
  • Output Current-Max
    100A
  • Application
    POWER
  • Current - Average Rectified (Io)
    200A DC
  • Max Reverse Voltage (DC)
    20V
  • Average Rectified Current
    200A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    20V
  • Diode Configuration
    1 Pair Common Anode
  • RoHS Status
    RoHS Compliant
Description
MBR20020CTR Overview
The maximum output voltage is 100A.Keeping the surge current under 1.5kA and preventing it from exceeding it should be the rule.Devices that have a forward voltage of 200A will operate.The reverse voltage peak of this device is 1A.The maximum reverse leakage current from a semiconductor device when reverse biased is 1μA.

MBR20020CTR Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR20020CTR Applications
There are a lot of GeneSiC Semiconductor
MBR20020CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR20020CTR More Descriptions
20V 200A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
DIODE MOD SCHOTT 20V 200A 2TOWER
Schottky Rectifier, Comn And, 20V, 200A, 2-Tower; Diode Module Configuration:1 Pair Common Anode; Forward Current If(Av):200A; Forward Voltage Vf Max:650Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:20V
Product Comparison
The three parts on the right have similar specifications to MBR20020CTR.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Max Reverse Leakage Current
    Max Surge Current
    Output Current-Max
    Application
    Current - Average Rectified (Io)
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    RoHS Status
    Number of Pins
    Weight
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Operating Temperature - Junction
    Forward Voltage
    JEDEC-95 Code
    Peak Non-Repetitive Surge Current
    Max Forward Surge Current (Ifsm)
    Height
    Length
    Width
    Radiation Hardening
    Operating Temperature (Max)
    Non-rep Pk Forward Current-Max
    Reverse Current-Max
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Diode Configuration:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io) (per Diode):
    View Compare
  • MBR20020CTR
    MBR20020CTR
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -40°C
    8541.10.00.80
    UPPER
    UNSPECIFIED
    R-PUFM-X2
    2
    Common Anode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    5mA @ 20V
    650mV @ 100A
    200A
    1μA
    1.5kA
    100A
    POWER
    200A DC
    20V
    200A
    1
    1A
    20V
    1 Pair Common Anode
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR2040CT
    -
    17 Weeks
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    Tube
    2005
    no
    Active
    1 (Unlimited)
    3
    EAR99
    150°C
    -65°C
    8541.10.00.80
    SINGLE
    -
    -
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 40V
    840mV @ 20A
    20A
    -
    -
    -
    EFFICIENCY
    -
    40V
    20A
    1
    100μA
    40V
    1 Pair Common Cathode
    ROHS3 Compliant
    3
    6.000006g
    e3
    Matte Tin (Sn)
    LOW POWER LOSS, FREE WHEELING DIODE
    Rectifier Diodes
    260
    40
    3
    -55°C~150°C
    840mV
    TO-220AB
    150A
    150A
    8.89mm
    10.4mm
    4.82mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VS-MBR2035CT-1-M3
    -
    12 Weeks
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    SILICON
    Tape & Reel (TR)
    2017
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    8541.10.00.80
    SINGLE
    -
    R-PSIP-T3
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 35V
    840mV @ 10A
    -
    -
    -
    -
    GENERAL PURPOSE
    -
    35V
    10A
    1
    -
    -
    1 Pair Common Cathode
    ROHS3 Compliant
    -
    -
    -
    -
    FREE WHEELING DIODE
    -
    260
    40
    -
    -65°C~150°C
    -
    -
    -
    -
    -
    -
    -
    -
    150°C
    150A
    100μA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR2035CT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    840mV @ 20A
    35V
    TO-220AB
    Fast Recovery = 200mA (Io)
    -
    Tube
    TO-220-3
    -55°C ~ 150°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    100µA @ 35V
    20A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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