GeneSiC Semiconductor MBR200100CTR

Name: MBR200100CTR
Brand: GeneSiC Semiconductor
SKU: 2420190-MBR200100CTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBR200100CTR

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2420190-MBR200100CTR

Description:: DIODE MODULE 100V 200A 2TOWER

ECAD Model:

Datasheet:: MBR200100CTR

Specifications

GeneSiC Semiconductor MBR200100CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR200100CTR.

Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis Mount, Through Hole
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
Solder
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
HTS Code
8541.10.00.80
Pitch
4.2mm
Terminal Position
UPPER
Orientation
Straight
Terminal Form
UNSPECIFIED
JESD-30 Code
R-PUFM-X2
Number of Contacts
6
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5mA @ 20V
Voltage - Forward (Vf) (Max) @ If
840mV @ 100A
Max Voltage Rating (DC)
600.6kV
Forward Current
200A
Max Reverse Leakage Current
1μA
Max Surge Current
1.5kA
Output Current-Max
100A
Application
POWER
Current - Average Rectified (Io)
200A DC
Max Reverse Voltage (DC)
100V
Average Rectified Current
200A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
100V
Diode Configuration
1 Pair Common Anode
RoHS Status
RoHS Compliant

Description

MBR200100CTR Overview
A maximum output voltage of 100A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 1.5kA.The device operates when the forward voltage is set to 200A.Typical devices like this one are powered by reverse voltage peaks of 1A.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.

MBR200100CTR Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A

MBR200100CTR Applications
There are a lot of GeneSiC Semiconductor
MBR200100CTR applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

MBR200100CTR More Descriptions

100V 200A Twin Tower Silicon Rectifier Module - Schottky (Reverse Configuration)
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 200A100P/70R
Schottky Rectifier, Comn And, 100V, 200A, 2-Tower; Diode Module Configuration:1 Pair Common Anode; Forward Current If(Av):200A; Forward Voltage Vf Max:840Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:100V

Product Comparison

The three parts on the right have similar specifications to MBR200100CTR.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Pitch

Terminal Position

Orientation

Terminal Form

JESD-30 Code

Number of Contacts

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Max Voltage Rating (DC)

Forward Current

Max Reverse Leakage Current

Max Surge Current

Output Current-Max

Application

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Diode Configuration

RoHS Status

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Packaging:

Package / Case:

Other Names:

Operating Temperature - Junction:

Mounting Type:

Moisture Sensitivity Level (MSL):

Manufacturer Standard Lead Time:

Lead Free Status / RoHS Status:

Diode Type:

Diode Configuration:

Detailed Description:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io) (per Diode):

Series

Additional Feature

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Operating Temperature (Max)

Operating Temperature - Junction

Non-rep Pk Forward Current-Max

Reverse Current-Max

View Compare
MBR200100CTR

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis Mount, Through Hole

Chassis Mount

Twin Tower

SILICON

Bulk

2013

yes

Active

1 (Unlimited)

2

Solder

EAR99

175°C

-40°C

8541.10.00.80

4.2mm

UPPER

Straight

UNSPECIFIED

R-PUFM-X2

6

2

Common Anode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

5mA @ 20V

840mV @ 100A

600.6kV

200A

1μA

1.5kA

100A

POWER

200A DC

100V

200A

1

1A

100V

1 Pair Common Anode

RoHS Compliant

-

-

-

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-

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-

-

-

-

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MBR20100CT-E1

BCD

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850mV @ 10A

100V

TO-220-3

Fast Recovery = 200mA (Io)

-

Tube

TO-220-3

MBR20100CT-E1-ND
MBR20100CT-E1DI

-65°C ~ 150°C

Through Hole

1 (Unlimited)

22 Weeks

Contains lead / RoHS Compliant

Schottky

1 Pair Common Cathode

Diode Array 1 Pair Common Cathode Schottky 100V 10A Through Hole TO-220-3

100µA @ 100V

10A

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MBR200100CTR vs MBR20100CT-E1
VS-MBR20100CT-1HM3

Vishay Semiconductor Diodes Division

-

12 Weeks

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

SILICON

Tape & Reel (TR)

2017

-

Active

1 (Unlimited)

3

-

EAR99

-

-

8541.10.00.80

-

SINGLE

-

-

R-PSIP-T3

-

2

Common Cathode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

100μA @ 100V

800mV @ 10A

-

-

-

-

-

GENERAL PURPOSE

-

100V

10A

1

-

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1 Pair Common Cathode

ROHS3 Compliant

-

-

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-

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-

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-

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-

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Automotive, AEC-Q101

FREE WHEELING DIODE

NOT SPECIFIED

unknown

NOT SPECIFIED

150°C

-55°C~150°C

850A

100μA

MBR200100CTR vs VS-MBR20100CT-1HM3
MBR20100CTP

Diodes Incorporated

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850mV @ 10A

100V

ITO-220S

Fast Recovery = 200mA (Io)

-

Tube

TO-220-3 Isolated Tab

-

-65°C ~ 175°C

Through Hole

-

-

-

Schottky

1 Pair Common Cathode

-

100µA @ 100V

10A

-

-

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MBR200100CTR vs MBR20100CTP