GeneSiC Semiconductor MBR200100CT
- Part Number:
- MBR200100CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2419910-MBR200100CT
- Description:
- DIODE MODULE 100V 200A 2TOWER
- ECAD Model:
-
- Datasheet:
- MBR200100CT
GeneSiC Semiconductor MBR200100CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR200100CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- JESD-30 CodeR-PUFM-X2
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr5mA @ 20V
- Voltage - Forward (Vf) (Max) @ If840mV @ 100A
- Forward Current200A
- Max Reverse Leakage Current1μA
- Max Surge Current1.5kA
- Output Current-Max100A
- ApplicationPOWER
- Current - Average Rectified (Io)200A DC
- Max Reverse Voltage (DC)100V
- Average Rectified Current200A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)100V
- Diode Configuration1 Pair Common Cathode
- RoHS StatusRoHS Compliant
MBR200100CT Overview
There is a maximum output voltage of 100A.As a general rule, surge currents should be monitored and kept below 1.5kA.In operation, this device will be set to 200A volts forward.This device is powered with reverse voltage peak of 1A V.When it's reverse biased, it's maximal reverse leakage current is 1μA.
MBR200100CT Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR200100CT Applications
There are a lot of GeneSiC Semiconductor
MBR200100CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
There is a maximum output voltage of 100A.As a general rule, surge currents should be monitored and kept below 1.5kA.In operation, this device will be set to 200A volts forward.This device is powered with reverse voltage peak of 1A V.When it's reverse biased, it's maximal reverse leakage current is 1μA.
MBR200100CT Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR200100CT Applications
There are a lot of GeneSiC Semiconductor
MBR200100CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR200100CT More Descriptions
100V 200A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 200A100P/70R
Schottky Rectifier, Comn Cthd, 100V, 200A, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):200A; Forward Voltage Vf Max:840Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:100V
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 200A100P/70R
Schottky Rectifier, Comn Cthd, 100V, 200A, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):200A; Forward Voltage Vf Max:840Mv; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:100V
The three parts on the right have similar specifications to MBR200100CT.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodeTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentMax Surge CurrentOutput Current-MaxApplicationCurrent - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationRoHS StatusAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Operating Temperature (Max)Operating Temperature - JunctionNon-rep Pk Forward Current-MaxReverse Current-MaxVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):Contact PlatingNumber of PinsSupplier Device PackageWeightSeriesCapacitanceVoltage - Rated DCCurrent RatingBase Part NumberVoltage - DC Reverse (Vr) (Max)Forward VoltagePeak Non-Repetitive Surge CurrentMax Forward Surge Current (Ifsm)HeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
-
MBR200100CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk2013yesActive1 (Unlimited)2EAR99175°C-40°C8541.10.00.80UPPERUNSPECIFIEDR-PUFM-X22Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 20V840mV @ 100A200A1μA1.5kA100APOWER200A DC100V200A11A100V1 Pair Common CathodeRoHS Compliant---------------------------------------- -
-12 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AASILICONTape & Reel (TR)2017-Active1 (Unlimited)3EAR99--8541.10.00.80SINGLE-R-PSIP-T32Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 35V840mV @ 10A----GENERAL PURPOSE-35V10A1--1 Pair Common CathodeROHS3 CompliantFREE WHEELING DIODE26040150°C-65°C~150°C150A100μA--------------------------------
-
---------------------------------------------840mV @ 20A35VTO-220-3Fast Recovery = 200mA (Io)-TubeTO-220-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode100µA @ 35V20A-------------------
-
ACTIVE (Last Updated: 1 day ago)11 Weeks-Through HoleTO-220-3-Tube2003-Active1 (Unlimited)--175°C-65°C-----Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 30V520mV @ 10A20A----10A30V10A-5mA30V1 Pair Common CathodeROHS3 Compliant-----65°C~175°C---------------Tin3TO-220AB4.535924gSWITCHMODE™500pF30V10AMBR2030CT30V580mV150A150A15.748mm10.287mm4.826mmNo SVHCNoLead Free
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
16 October 2023
What Is H1102N Pulse Ethernet Transformer?
Ⅰ. What is a transformer?Ⅱ. Overview of H1102NLⅢ. Pin configuration, symbol and footprint of H1102NLⅣ. Technical parameters of H1102NLⅤ. Features of H1102NLⅥ. Working principle of H1102NLⅦ. Dimensions and... -
16 October 2023
BD139 Transistor Equivalent, Technical Parameters and Applications
Ⅰ. Overview of BD139Ⅱ. BD139 symbol, footprint and pin configurationⅢ. Technical parameters of BD139Ⅳ. Features of BD139Ⅴ. Working principle of BD139 transistorⅥ. Circuit of BD139 transistor power amplifierⅦ.... -
17 October 2023
IRFP250 Transistor Equivalent, Pin Configuration, Working Principle and More
Ⅰ. Overview of IRFP250Ⅱ. Symbol, footprint and pin configuration of IRFP250Ⅲ. Technical parameters of IRFP250Ⅳ. What are the features of IRFP250?Ⅴ. Working principle of IRFP250Ⅵ. Applications of IRFP250Ⅶ.... -
17 October 2023
A Review of TDA2009A Dual Audio Power Amplifier
Ⅰ. What is TDA2009A?Ⅱ. Symbol, footprint and pin configuration of TDA2009AⅢ. Technical parameters of TDA2009AⅣ. What are the features of TDA2009A?Ⅴ. How does the overheating protection circuit of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.